A. I. Nusir, A. M. Hil, M. O. Manasreh, and J. B. Herzog, "Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes," Photonics Res. 3, 1 (2015)

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- Photonics Research
- Vol. 3, Issue 1, 1 (2015)

Fig. 1. (a) Schematic of device showing two electrodes (gold) with channels between the interdigital fingers (black). Diagram also shows transverse, E T , and longitudinal, E L , polarizations, as well as the polarization angle, θ ; (b) cross section of device showing Au electrodes with thickness, w , and spacing, d , attached to the semi-insulating GaAs substrate with the Ti layer.

Fig. 2. (a) I – V characteristics of device with 5 μm electrode spacing under illumination intensity of 100 mW / cm 2 ; (b) detectivity of the device with 5 μm electrode spacing.

Fig. 3. (a) Spectral response spectra for transverse polarization as function of electrode spacing, d ; (b) normalized peak from (a) plotted as function of electrode spacing; (c) normalized calculated photocurrent as a function of electrode spacing at 875 nm incident light.

Fig. 4. (a) Measured spectral response of a 5 μm device for transverse and longitudinal polarization; (b) calculated optical enhancement near the electrode edge for transverse polarization; (c) calculated optical enhancement near the electrode edge for longitudinal polarization; (d) polarization-dependent normalized spectral response measurements (squares) and normalized photocurrent calculations (circles) with a A cos 2 θ + B fit (line).

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