Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes

A. I. Nusir; A. M. Hil; M. O. Manasreh; and J. B. Herzog

doi:10.1364/PRJ.3.000001

Journals >Photonics Research >Volume 3 >Issue 1 >Page 1 > Article

Photonics Research
Vol. 3, Issue 1, 1 (2015)

Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes

A. I. Nusir^1,*, A. M. Hil², M. O. Manasreh¹, and and J. B. Herzog²

Author Affiliations

¹Electrical Engineering Department, University of Arkansas, Fayetteville, Arkansas 72701, USA

²Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

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DOI: 10.1364/PRJ.3.000001 Cite this Article Set citation alerts

A. I. Nusir, A. M. Hil, M. O. Manasreh, and J. B. Herzog, "Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes," Photonics Res. 3, 1 (2015) Copy Citation Text

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A. I. Nusir, A. M. Hil, M. O. Manasreh, and J. B. Herzog, "Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes," Photonics Res. 3, 1 (2015)

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