• Infrared and Laser Engineering
  • Vol. 35, Issue 3, 289 (2006)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Reliability of long-wavelength PC HgCdTe IR detectors[J]. Infrared and Laser Engineering, 2006, 35(3): 289 Copy Citation Text show less
    References

    [1] LAWSON W D,NIELSEN S,PUTLEY E H,et al.Preparation and properties of HgTe and mixed crystals of HgTe-CdTe[J].J Phys Chem Solids,1959,9:325-329.

    [2] SELLER D G,HARMAN G G,LOWNEY J R,et al.HgCdTe Detector Reliability Study for the GOES Program[R].New York:NIST (U.S),1991.

    [3] KINCH M A,BORRELLO S R,SIMMONS A.0.1 eV HgCdTe photoconductive detector performance[J].Infrared Physics,1977,17(2):127-135.

    [9] LIU Da-fu,XU Guo-sen,HUANG Yang-cheng,et al.Electrical shock effect on HgCdTe photoconductive detectors[C]//Adaptive Optics and Applications Ⅲ,Proceedings of the SPIE,2005,5640:34-41.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Reliability of long-wavelength PC HgCdTe IR detectors[J]. Infrared and Laser Engineering, 2006, 35(3): 289
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