Research and development of high brightness GaN-based blue LED and white LED

[in Chinese]; [in Chinese]; [in Chinese]

[5] Fang Zhilie. Semiconductor Lighting Materials and Devices [M]. Shanghai: Fudan University press, 1992.

[13] Mukai T. Recent progress in group-Ⅲ nitride light-emitting diodes [J]. IEEE J. Select. Topics Quantum Electron.,2002, 8(2): 264-270.

[14] Koike M, Shibata N, Kato H, et al. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications [J]. IEEE J. Select. Topics Quantum Electron., 2002, 8(2): 271-277.

[15] Lai Weichih, Chang Shooujinn, Meiso Yokoyam, et al. InGaN-AlInGaN multiquantum-well LEDs [J]. IEEE Photon. Technol. Lett. 2001, 13(6): 559-561.

[16] Sheu J K, Chi G C, Jou M J. Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer [J]. IEEE Photon. Technol.Lett. 2001,13(11):1164-1166.

[17] Jeon Seongran, Cho Myongsoo, Yu Mina, et al. GaN-based light-emitting diodes using tunnel junctions [J]. IEEE J. Select. Topics Quantum Electron., 8(4): 739-743.

[18] Lee Chiaming, Chuo Changcheng, Chen Iling, et al. High-brightness inverted InGaN-GaN multiple-quantumwell light-emitting diodes without a transparent conductive layer [J]. IEEE Electron. Device Lett. 2003, 24(3):156-158.

[19] Subramanian Muthu, Schuurmans F J, Pashley M D. Red, green, and blue LED based white light generation:Issues and control [C]∥Industry Applications Conference, 2002. 37th IAS Annual Meeting, 2002, 13-18.

[20] Regina M M, Mueller G O, Krames M R, et al. High-power phosphor-converted light-emitting diodes based on Ⅲ-Nitrides [J]. IEEE J. Select. Topics Quantum Electron., 2002, 8(2): 339-345.

[21] Chen C H, Chang S J, Su Y K, et al. Nitride-based cascade near white light-emitting diodes [J]. IEEE Photon.Technol. Lett. 2002, 14(7): 908-910.

[22] Sheu J K, Pan C J, Chi G C, et al. White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer [J]. IEEE Photon. Technol. Lett. 2002, 14(4): 450-452.

[23] Nishida T, Ban T, Kobayashi N. High-color-rending light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors [J]. Appl. Phy. Lett., 2003, 82(22): 3817-3819.

[24] Nakamura S. Ⅲ-Ⅴ nitride-based LEDs and lasers: current status and future opportunities [C]∥ Electron Devices Meeting, 2000. IEDM Technical Digest. International. Dec. 2000.

[25] Guo Xiaoyun, Graff J, Schubert F E. Photon recycling semiconductor light emitting diode [J]. IEDM Tech. Dig.,1999: 600-605.