• Journal of Infrared and Millimeter Waves
  • Vol. 40, Issue 5, 673 (2021)
Li ZHONG1、3, Xiao-Feng SU1, Wei-Da HU1, and Fan-Sheng CHEN1、2、*
Author Affiliations
  • 1Key Laboratory of Intelligent Infrared Perception,Shanghai Institute of Technical Physics,Chinese Academy;of Sciences,Shanghai 200083,China
  • 2Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
  • 3University of Chinese Academy of Sciences,Beijing 100049,China
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    DOI: 10.11972/j.issn.1001-9014.2021.05.014 Cite this Article
    Li ZHONG, Xiao-Feng SU, Wei-Da HU, Fan-Sheng CHEN. The simulation of intra-pixel sensitivity for HgCdTe infrared focal plane array[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 673 Copy Citation Text show less
    Schematic diagram of HgCdTe infrared focal plane array
    Fig. 1. Schematic diagram of HgCdTe infrared focal plane array
    Basic flow of the simulation of the HgCdTe infrared focal plane array based on the Monte Carlo method
    Fig. 2. Basic flow of the simulation of the HgCdTe infrared focal plane array based on the Monte Carlo method
    The simulated intra-pixel sensitivity of the HgCdTe infrared focal plane array
    Fig. 3. The simulated intra-pixel sensitivity of the HgCdTe infrared focal plane array
    The simulation results of different pixel pitch:(a)The simulated IPS with different pixel pitch;(b)The standard deviation and FWHM of IPS varies with pixel pitch;(c)The inter-pixel crosstalk varies with pixel pitch
    Fig. 4. The simulation results of different pixel pitch:(a)The simulated IPS with different pixel pitch;(b)The standard deviation and FWHM of IPS varies with pixel pitch;(c)The inter-pixel crosstalk varies with pixel pitch
    The simulation results of different absorber thickness:(a)The simulated IPS with different absorber thickness;(b)The standard deviation and FWHM of IPS varies with absorber thickness;(c)The inter-pixel crosstalk varies with absorber thickness
    Fig. 5. The simulation results of different absorber thickness:(a)The simulated IPS with different absorber thickness;(b)The standard deviation and FWHM of IPS varies with absorber thickness;(c)The inter-pixel crosstalk varies with absorber thickness
    The simulation results of different wavelength:(a)The simulated IPS with different wavelength;(b)The standard deviation and FWHM of IPS varies with wavelength;(c)The inter-pixel crosstalk varies with wavelength
    Fig. 6. The simulation results of different wavelength:(a)The simulated IPS with different wavelength;(b)The standard deviation and FWHM of IPS varies with wavelength;(c)The inter-pixel crosstalk varies with wavelength
    序号研究参数像素中心距/μm吸收层厚度/μm吸收层掺杂/cm-3波长/μm
    1像素中心距15,20,25,30101×10169.5
    2吸收层厚度308~161×10169.5
    3入射波长30101×10165~9.5
    Table 1. The parameter setting for the non-uniformity analysis of intra-pixel sensitivity
    Li ZHONG, Xiao-Feng SU, Wei-Da HU, Fan-Sheng CHEN. The simulation of intra-pixel sensitivity for HgCdTe infrared focal plane array[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 673
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