[1] H HAMADA, T TSUTSUMI, H SUGIYAMA et al. Millimeter- wave InP Device technologies for ultra-high speed wireless communications toward beyond 5G. Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco(2019).
[2] J AJAYAN, D NIRMAL. A review of InP/InAlAs/InGaAs based transistors for high frequency applications. Superlattices and Microstructures, 86:, 1(2015).
[3] Y Q FANG, W CHEN, H AOT et al. InGaAs/InP single-photon detectors with 60% detection efficiency at 1550 nm. Review of Scientific Instruments, 083102(2020).
[4] S WANG. Recent research progress of THz InP HEMT and HBT technologies. Micronanoelectronic Technology, 381(2018).
[5] O MOUTANABBIR, U GOSELE. Heterogeneous integration of compound semiconductors. Annual Review of Materials Research, 40:, 469(2010).
[6] E M MONBERG, W A GAULT, F DOMINGUEZ. The growth and characterization of large size, high quality, InP single crystals. Journal of the Electrochemical Society, 500(1988).
[7] A S JORDAN, A R VONNEIDA, R CARUSOTHE. The theory and practice of dislocation reduction in GaAs and InP. Journal of Crystal Growth, 555(1984).
[8] K IWASAKI, K SATO, K AOYAMA. 6-in diameter InP single crystals grown by the hot-wall LEC method and the mirror wafers. IEEE Transactions on Semiconductor Manufacturing, 360(2003).
[9] H SHAO, N SUN, X ZHANG et al. High quality 6-inch InP single crystal grown by LEC method. Semiconductor Technology, 617(2020).
[10] O ODA, K KAINOSHO, K KOHIRO et al. Development of high quality InP bulk crystals. Journal of Electronic Materials, 1007(1991).
[11] K KOHIRO, M OHTA, O ODA. Growth of long-length 3 inch diameter Fe-doped InP single crystal. Journal of Crystal Growth, 197(1996).
[12] K KOHIRO, K KAINOSHO, O ODA et al. Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method. Journal of Electronic Materials, 1013(1991).
[13] Y HOSOKAWA, Y YABUHARA, R NAKAI et al. Development of 4-inch diameter InP single crystal with low dislocation density using VCZ method. 10th Intern. Conf. on Indium Phosphide and Related Materials, Tsukuba(1998).
[14] A NODA, K SUZUKI, A ARAKAWA et al. 4-inch InP crystals grown by phosphorous vapor controlled LEC method. 14th Indium Phosphide and Related Materials Conference, Stockholm(2002).