• Journal of Inorganic Materials
  • Vol. 38, Issue 3, 335 (2023)
Yanlei SHI1、2, Niefeng SUN2、*, Chengyan XU1, Shujie WANG2, Peng LIN2, Chunlei MA2, Senfeng XU2, Wei WANG2, Chunmei CHEN2, Lijie FU2, Huimin SHAO2, Xiaolan LI2, Yang WANG2, and Jingkai QIN1、*
Author Affiliations
  • 11. Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
  • 22. National Key Laboratory of ASIC, The 13th Research Institute of China Electronic Technology Group Corporation, Shijiazhuang 050051, China
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    DOI: 10.15541/jim20220645 Cite this Article
    Yanlei SHI, Niefeng SUN, Chengyan XU, Shujie WANG, Peng LIN, Chunlei MA, Senfeng XU, Wei WANG, Chunmei CHEN, Lijie FU, Huimin SHAO, Xiaolan LI, Yang WANG, Jingkai QIN. Thermal Field of 6-inch Indium Phosphide Single Crystal Growth by Semi-sealed Czochralski Method[J]. Journal of Inorganic Materials, 2023, 38(3): 335 Copy Citation Text show less
    References

    [1] H HAMADA, T TSUTSUMI, H SUGIYAMA et al. Millimeter- wave InP Device technologies for ultra-high speed wireless communications toward beyond 5G. Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco(2019).

    [2] J AJAYAN, D NIRMAL. A review of InP/InAlAs/InGaAs based transistors for high frequency applications. Superlattices and Microstructures, 86:, 1(2015).

    [3] Y Q FANG, W CHEN, H AOT et al. InGaAs/InP single-photon detectors with 60% detection efficiency at 1550 nm. Review of Scientific Instruments, 083102(2020).

    [4] S WANG. Recent research progress of THz InP HEMT and HBT technologies. Micronanoelectronic Technology, 381(2018).

    [5] O MOUTANABBIR, U GOSELE. Heterogeneous integration of compound semiconductors. Annual Review of Materials Research, 40:, 469(2010).

    [6] E M MONBERG, W A GAULT, F DOMINGUEZ. The growth and characterization of large size, high quality, InP single crystals. Journal of the Electrochemical Society, 500(1988).

    [7] A S JORDAN, A R VONNEIDA, R CARUSOTHE. The theory and practice of dislocation reduction in GaAs and InP. Journal of Crystal Growth, 555(1984).

    [8] K IWASAKI, K SATO, K AOYAMA. 6-in diameter InP single crystals grown by the hot-wall LEC method and the mirror wafers. IEEE Transactions on Semiconductor Manufacturing, 360(2003).

    [9] H SHAO, N SUN, X ZHANG et al. High quality 6-inch InP single crystal grown by LEC method. Semiconductor Technology, 617(2020).

    [10] O ODA, K KAINOSHO, K KOHIRO et al. Development of high quality InP bulk crystals. Journal of Electronic Materials, 1007(1991).

    [11] K KOHIRO, M OHTA, O ODA. Growth of long-length 3 inch diameter Fe-doped InP single crystal. Journal of Crystal Growth, 197(1996).

    [12] K KOHIRO, K KAINOSHO, O ODA et al. Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method. Journal of Electronic Materials, 1013(1991).

    [13] Y HOSOKAWA, Y YABUHARA, R NAKAI et al. Development of 4-inch diameter InP single crystal with low dislocation density using VCZ method. 10th Intern. Conf. on Indium Phosphide and Related Materials, Tsukuba(1998).

    [14] A NODA, K SUZUKI, A ARAKAWA et al. 4-inch InP crystals grown by phosphorous vapor controlled LEC method. 14th Indium Phosphide and Related Materials Conference, Stockholm(2002).

    Yanlei SHI, Niefeng SUN, Chengyan XU, Shujie WANG, Peng LIN, Chunlei MA, Senfeng XU, Wei WANG, Chunmei CHEN, Lijie FU, Huimin SHAO, Xiaolan LI, Yang WANG, Jingkai QIN. Thermal Field of 6-inch Indium Phosphide Single Crystal Growth by Semi-sealed Czochralski Method[J]. Journal of Inorganic Materials, 2023, 38(3): 335
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