• Infrared and Laser Engineering
  • Vol. 32, Issue 6, 647 (2003)
[in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]1, and [in Chinese]1
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on AlxGa1-xAs selective wet oxidation technology[J]. Infrared and Laser Engineering, 2003, 32(6): 647 Copy Citation Text show less
    References

    [1] Soda H, Iga K, Kitahara C, et al. GaInAsP/InP surface emitting injection lasers[J]. Jpn J Appl Phys, 1979,18:2329-2331.

    [2] Ebeling K J, Fiedler U, Michalizik R, et al. Recent advances in semiconductor vertical cavity lasers for optical communications and optical interconnects[A]. Proceeding 22nd Euro Conf Optical Communication (ECOC)[C]. 1996,2.81-88.

    [3] Dallesasse J M, Holonyak N, Sugg A R, et al. Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices[J]. Appl Phys Lett, 1990,57:2844-2847.

    [4] Sugg A R, Holonyak N, Baker J E, et al. Native oxide stabilization of AlAs-GaAs heterostructures[J]. Appl Phys Lett,1991,58:1199-1201.

    [5] Guha S, Agahi F, Pezeshki B, et al. Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation[J]. Appl Phys Lett,1996,68:906-909.

    [6] Deal B E, Grove A S. General relationship for the thermal oxidation of silicon[J]. Appl Phys Lett, 1965,36:3770-3778.

    [7] Hayashi Y, Mukiharwa T, Hatori N, et al. Lasing characteristic of low-threshold oxide confinement InGaAs-GaAlAs vertical-cavity surface-emitting lasers[J]. IEEE Photonics Tec Lett,1995,7:1234-1237.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on AlxGa1-xAs selective wet oxidation technology[J]. Infrared and Laser Engineering, 2003, 32(6): 647
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