Effect of 1070 nm laser intensity on parameters of In0.3Ga0.7As solar cell

Guangji Li; Hongchao Zhang; Chengmin Wang; Yunxiang Pan; Jian Lu; Dayong Zhou

doi:10.3788/COL201917.031601

Journals >Chinese Optics Letters >Volume 17 >Issue 3 >Page 031601 > Article

Chinese Optics Letters
Vol. 17, Issue 3, 031601 (2019)

Effect of 1070 nm laser intensity on parameters of In_0.3Ga_0.7As solar cell

Guangji Li¹, Hongchao Zhang^1、**, Chengmin Wang^1、2, Yunxiang Pan¹, Jian Lu^1、*, and Dayong Zhou³

Author Affiliations

¹School of Science, Nanjing University of Science and Technology, Nanjing 210094, China

²College of Mechanical Engineering, Huaian Vocational College of Information Technology, Huaian 223003, China

³State Key Laboratory of High-Efficiency Power Conversion, Shanghai Institute of Space Power-Sources, Shanghai 200245, China

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DOI: 10.3788/COL201917.031601 Cite this Article Set citation alerts

Guangji Li, Hongchao Zhang, Chengmin Wang, Yunxiang Pan, Jian Lu, Dayong Zhou. Effect of 1070 nm laser intensity on parameters of In_0.3Ga_0.7As solar cell[J]. Chinese Optics Letters, 2019, 17(3): 031601 Copy Citation Text

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