[1] Bazhi Tian, Ping Xie, Thomas J. Kempa et al.. Singer-crystalline kinked semiconductor nanowire superstures［J］. Nature Nanotechnology, 2009, 4(12): 824～829
[5] Jingtao Zhou, Huajun Shen, Huihui Zhang et al.. Design and fabrication of a compact multimode interference splitter with silicon photonic nanowires［J］. Chin. Opt. Lett., 2009, 7(11): 1041～1044
[6] S. O. Mariager, C. B. Srensen, M. Aagesen et al.. Facet structure of GaAs nanowires grown by molecular beam epitaxy［J］. Appl. Phys. Lett., 2007, 91(8): 083106
[7] D. Spirkoska, J. Arbiol, A. Gustafsson et al.. Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures［J］. Phys. Rev. B, 2009, 80(24): 245325
[8] J. C. Harmand, G. Patriarche, N. Péré-Laperne et al.. Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth［J］. Appl. Phys. Lett., 2005, 87(20): 203101
[9] Z. H. Wu, X. Mei, D. Kim et al.. Growth, branching, and kinking of molecular-beam epitaxial 〈110〉 GaAs nanowires［J］. Appl. Phys. Lett., 2003, 83(16): 3368～3370
[10] R. Leitsmann, F. Bechstedt. Surface influence on stability and structure of hexagon-shaped III-V semiconductor nanorods［J］. J. Appl. Phys., 2007, 102(6): 063528
[11] M. D. Segall, Philip J. D. Lindan, M. J. Probert et al.. First-principles simulation: ideas, illustrations and the CASTEP code［J］. J. Phys., 2002, 14(11): 2717～2744
[12] Chin Yu Yeh, Z. W. Lu, S. Froyen et al.. Zunger, Zinc-blende-wurtzite polytypism in semiconductors［J］. Phys. Rev. B, 1992, 46(16): 10086～10097
[13] N. Moll, A. Kley, E. Pehlke et al.. GaAs equilibrium crystal shape from first principles［J］. Phys. Rev. B, 1996, 54(12): 8844～8855
[14] W. Liu, W. T. Zheng, Q. Jiang. First-principles study of the surface energy and work function of III-V semiconductor compounds［J］. Phys. Rev. B, 2007, 75(23): 235322
[15] S. B. Zhang, Suhuai Wei. Surface energy and the common dangling bond rule for semiconductors［J］. Phys. Rev. Lett., 2004, 92(8): 086102
