Fig. 1. XRD patterns for Mn50–xCrxNi42Sn8(x = 0, 0.4, 0.6, 0.8) polycrystalline samples measured at room temperature.
Fig. 2. Temperature dependence of magnetization upon field heating procedures in the field of 100 Oe for Mn50–xCrxNi42Sn8(x = 0, 0.4, 0.6, 0.8) polycrystalline samples, and inset shows magnification of the shadow part.
Fig. 3. (a) Cr content dependence of Curie temperature of martensite phase
and martensitic transformation temperature
TM, (b)
TM as a function of valence electron concentration, (c) cell volume, and (d) the distance between Ni and Mn at D site for Mn
50–xCr
xNi
42Sn
8 (
x = 0.4, 0.6, 0.8).
Fig. 4. Temperature dependence of magnetization upon heating procedures in field of 20 kOe for Mn50–xCrxNi42Sn8 (x = 0.4, 0.6, 0.8).
Fig. 5. The sketched unit cells of the austenite and martensite structures.
Fig. 6. (a) Magnetization hysteresis loops for Mn50–xCrxNi42Sn8(x = 0, 0.6, 0.8) polycrystalline samples measured at 5 K after 500 Oe field cooling, inset shows the magnification of the shadow part; (b) the values of HC and HEB as a function of Cr content.
Fig. 7. (a) Magnetization hysteresis loops for Mn49.2Cr0.8Ni42Sn8 polycrystalline sample measured at 5 K after different field cooling, inset shows the magnification of the shadow part; (b) the values of HC and HEB under different cooling field.
x | a = b/Å
| c/Å
| c/a | 晶胞体积/Å3 | 0 | 5.4881 | 6.9681 | 1.269 | 209.87 | 0.4 | 5.4966 | 6.9601 | 1.266 | 210.30 | 0.6 | 5.5136 | 6.9463 | 1.259 | 210.70 | 0.8 | 5.5221 | 6.9342 | 1.255 | 211.50 |
|
Table 1. Lattice parameters, c/a, and cell volume of Mn50–x CrxNi42Sn8 (x = 0, 0.4, 0.6, 0.8) polycrystalline samples at room temperature.
Cr含量x | MnD-NiA/Å
(
$ \sqrt 3 $![]() a/4)
| MnB-MnA/Å
(
$ \sqrt 3 $![]() a/4)
| MnB-MnD/Å
(a/2)
| 0 | 2.376 | 2.376 | 2.744 | 0.4 | 2.38 | 2.38 | 2.748 | 0.6 | 2.387 | 2.387 | 2.757 | 0.8 | 2.391 | 2.391 | 2.761 |
|
Table 2. The atomic distance of Mn(D)-Ni(A), Mn(B)-Mn(A),and Mn(B)-Mn(D)in Mn50–xCrxNi42Sn8(x = 0, 0.4, 0.6, 0.8) polycrystalline samples.