Bipolar phototransistor in a vertical Au/graphene/MoS2 van der Waals heterojunction with photocurrent enhancement

Jiaqi Li; Xurui Mao; Sheng Xie; Zhaoxin Geng; Hongda Chen

doi:10.1364/PRJ.8.000039

[1] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis. Single-layer MoS₂ transistors. Nat. Nanotechnol., 6, 147-150(2011).

[2] Y. M. Lin, K. A. Jenkins, A. Valdes-Garcia, J. P. Small, D. B. Farmer, P. Avouris. Operation of graphene transistors at gigahertz frequencies. Nano Lett., 9, 422-426(2009).

[3] G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, F. H. L. Koppens. Hybrid graphene-quantum dot phototransistors with ultrahigh gain. Nat. Nanotechnol., 7, 363-368(2012).

[4] O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, A. Kis. Ultrasensitive photodetectors based on monolayer MoS₂. Nat. Nanotechnol., 8, 497-501(2013).

[5] P. Agnihotri, P. Dhakras, J. U. Lee. Bipolar junction transistors in two-dimensional WSe₂ with large current and photocurrent gains. Nano Lett., 16, 4355-4360(2016).

[6] Y. Xie, B. Zhang, S. Wang, D. Wang, A. Wang, Z. Wang, H. Yu, H. Zhang, Y. Chen, M. Zhao, B. Huang, L. Mei, J. Wang. Ultrabroadband MoS₂ photodetector with spectral response from 445 to 2717 nm. Adv. Mater., 29, 1605972(2017).

[7] Y. F. Song, Z. M. Liang, H. Zhang, Q. Zhang, L. M. Zhao, D. Y. Shen, D. Y. Tang. Period-doubling and quadrupling bifurcation of vector soliton bunches in a graphene mode locked fiber laser. IEEE Photon. J., 9, 4502308(2017).

[8] Y. F. Song, H. Zhang, L. M. Zhao, D. Y. Shen, D. Y. Tang. Coexistence and interaction of vector and bound vector solitons in a dispersion-managed fiber laser mode locked by graphene. Opt. Express, 24, 1814-1822(2016).

[9] Y. F. Song, L. Li, H. Zhang, D. Y. Shen, D. Y. Tang, K. P. Loh. Vector multi-soliton operation and interaction in a graphene mode-locked fiber laser. Opt. Express, 21, 10010-10018(2013).

[10] F. Davoodi, N. Granpayeh. Nonlinear graphene-transition metal dichalcogenides heterostructure refractive index sensor. IEEE Sens. J., 19, 4435-4442(2019).

[11] K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz. Atomically thin MoS₂: a new direct-gap semiconductor. Phys. Rev. Lett., 105, 136805(2010).

[12] G. G. Naumis, S. Barraza-Lopez, M. Oliva-Leyva, H. Terrones. Electronic and optical properties of strained graphene and other strained 2D materials: a review. Rep. Prog. Phys., 80, 096501(2017).

[13] C. Xie, Y. Wang, Z. X. Zhang, D. Wang, L. B. Luo. Graphene/semiconductor hybrid heterostructures for optoelectronic device applications. Nano Today, 19, 41-83(2018).

[14] K. Roy, M. Padmanabhan, S. Goswami, T. P. Sai, G. Ramalingam, S. Raghavan, A. Ghosh. Graphene-MoS₂ hybrid structures for multifunctional photoresponsive memory devices. Nat. Nanotechnol., 8, 826-830(2013).

[15] H. Xu, J. X. Wu, Q. L. Feng, N. N. Mao, C. M. Wang, J. Zhang. High responsivity and gate tunable graphene-MoS₂ hybrid phototransistor. Small, 10, 2300-2306(2014).

[16] D. De Fazio, I. Goykhman, D. Yoon, M. Bruna, A. Eiden, S. Milana, U. Sassi, M. Barbone, D. Dumcenco, K. Marinov, A. Kis, A. C. Ferrari. High responsivity, large-area graphene/MoS₂ flexible photodetectors. ACS Nano, 10, 8252-8262(2016).

[17] X. Yan, D. W. Zhang, C. S. Liu, W. Z. Bao, S. Y. Wang, S. J. Ding, G. F. Zheng, P. Zhou. High performance amplifier element realization via MoS₂/GaTe heterostructures. Adv. Sci., 5, 1700830(2018).

[18] Y. Liu, N. O. Weiss, X. D. Duan, H. C. Cheng, Y. Huang, X. F. Duan. Van der Waals heterostructures and devices. Nat. Rev. Mater., 1, 16042(2016).

[19] K. H. Lee, T. H. Kim, H. J. Shin, S. W. Kim. Highly efficient photocurrent generation from nanocrystalline graphene-molybdenum disulfide lateral interfaces. Adv. Mater., 28, 1793-1798(2016).

[20] H. W. Liu, D. Li, C. Ma, X. H. Zhang, X. X. Sun, C. G. Zhu, B. Y. Zheng, Z. X. Zou, Z. Y. Luo, X. L. Zhu, X. Wang, A. L. Pan. Van der Waals epitaxial growth of vertically stacked Sb₂Te₃/MoS₂ p-n heterojunctions for high performance optoelectronics. Nano Energy, 59, 66-74(2019).

[21] W. J. Yu, Z. Li, H. L. Zhou, Y. Chen, Y. Wang, Y. Huang, X. F. Duan. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat. Mater., 12, 246-252(2013).

[22] H. J. Tan, W. S. Xu, Y. W. Sheng, C. S. Lau, Y. Fan, Q. Chen, M. Tweedie, X. C. Wang, Y. Q. Zhou, J. H. Warner. Lateral graphene-contacted vertically stacked WS₂/MoS₂ hybrid photodetectors with large gain. Adv. Mater., 29, 1702917(2017).

[23] Y. Wang, R. Fullon, M. Acerce, C. E. Petoukhoff, J. Yang, C. G. Chen, S. N. Du, S. K. Lai, S. P. Lau, D. Voiry, D. O’Carroll, G. Gupta, A. D. Mohite, S. D. Zhang, H. Zhou, M. Chhowalla. Solution-processed MoS₂/organolead trihalide perovskite photodetectors. Adv. Mater., 29, 1603995(2017).

[24] Y. Z. Xue, Y. P. Zhang, Y. Liu, H. T. Liu, J. C. Song, J. Sophia, J. Y. Liu, Z. Q. Xu, Q. Y. Xu, Z. Y. Wang, J. L. Zheng, Y. Q. Liu, S. J. Li, Q. L. Bao. Scalable production of a few-layer MoS₂/WS₂ vertical heterojunction array and its application for photodetectors. ACS Nano, 10, 573-580(2016).

[25] R. Cao, H. D. Wang, Z. N. Guo, D. K. Sang, L. Y. Zhang, Q. L. Xiao, Y. P. Zhang, D. Y. Fan, J. Q. Li, H. Zhang. Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity. Adv. Opt. Mater., 7, 1900020(2019).

[26] Q. D. Ou, Y. P. Zhang, Z. Y. Wang, J. A. Yuwono, R. B. Wang, Z. G. Dai, W. Li, C. X. Zheng, Z. Q. Xu, X. Qi, S. Duhm, N. V. Medhekar, H. Zhang, Q. L. Bao. Strong depletion in hybrid perovskite p-n junctions induced by local electronic doping. Adv. Mater., 30, 1705792(2018).

[27] K. P. Bera, G. Haider, Y.-T. Huang, P. K. Roy, C. R. Paul Inbaraj, Y.-M. Liao, H.-I. Lin, C.-H. Lu, C. Shen, W. Y. Shih, W.-H. Shih, Y.-F. Chen. Graphene sandwich stable perovskite quantum-dot light-emissive ultrasensitive and ultrafast broadband vertical phototransistors. ACS Nano, 13, 12540-12552(2019).

[28] H. H. Yoon, S. Jung, G. Choi, J. Kim, Y. Jeon, Y. S. Kim, H. Y. Jeong, K. Kim, S. Y. Kwon, K. Park. Strong fermi-level pinning at metal/n-Si(001) interface ensured by forming an intact Schottky contact with a graphene insertion layer. Nano Lett., 17, 44-49(2017).

[29] S. S. Chee, D. Seo, H. Kim, H. Jang, S. Lee, S. P. Moon, K. H. Lee, S. W. Kim, H. Choi, M. H. Ham. Lowering the Schottky barrier height by graphene/Ag electrodes for high-mobility MoS₂ field-effect transistors. Adv. Mater., 31, 1804422(2019).

[30] Y. Xu, C. Cheng, S. C. Du, J. Y. Yang, B. Yu, J. Luo, W. Y. Yin, E. P. Li, S. R. Dong, P. D. Ye, X. F. Duan. Contacts between two- and three-dimensional materials: Ohmic, Schottky, and p-n heterojunctions. ACS Nano, 10, 4895-4919(2016).

[31] A. Di Bartolomeo, A. Grillo, F. Urban, L. Iemmo, F. Giubileo, G. Luongo, G. Amato, L. Croin, L. F. Sun, S. J. Liang, L. K. Ang. Asymmetric Schottky contacts in bilayer MoS₂ field effect transistors. Adv. Funct. Mater., 28, 1800657(2018).

[32] S. Das, H. Y. Chen, A. V. Penumatcha, J. Appenzeller. High performance multilayer MoS₂ transistors with scandium contacts. Nano Lett., 13, 100-105(2013).

[33] J. Y. Wu, Y. T. Chun, S. P. Li, T. Zhang, D. P. Chu. Electrical rectifying and photosensing property of schottky diode based on MoS₂. ACS Appl. Mater. Interfaces, 10, 24613-24619(2018).

[34] F. N. Xia, V. Perebeinos, Y. M. Lin, Y. Q. Wu, P. Avouris. The origins and limits of metal-graphene junction resistance. Nat. Nanotechnol., 6, 179-184(2011).

[35] G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, P. J. Kelly. Doping graphene with metal contacts. Phys. Rev. Lett., 101, 026803(2008).

[36] F. Y. Liu, W. T. Navaraj, N. Yogeswaran, D. H. Gregory, R. Dahiya. Van der Waals contact engineering of graphene field-effect transistors for large-area flexible electronics. ACS Nano, 13, 3257-3268(2019).

[37] F. Ruffino, G. Meli, M. G. Grimaldi. Nanoscale electrical characteristics of metal (Au, Pd)-graphene-metal (Cu) contacts. Solid State Commun., 225, 1-6(2016).

[38] W. J. Su, H. C. Chang, Y. T. Shih, Y. P. Wang, H. P. Hsu, Y. S. Huang, K. Y. Lee. Two dimensional MoS₂/graphene p-n heterojunction diode: fabrication and electronic characteristics. J. Alloy. Compd., 671, 276-282(2016).

[39] W. J. Yu, Y. Liu, H. L. Zhou, A. X. Yin, Z. Li, Y. Huang, X. F. Duan. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat. Nanotechnol., 8, 952-958(2013).

[40] A. Katumba, M. Freiberger, F. Laporte, A. Lugnan, S. Sackesyn, C. H. Ma, J. Dambre, P. Bienstman. Neuromorphic computing based on silicon photonics and reservoir computing. IEEE J. Sel. Top. Quantum Electron., 24, 8300310(2018).

[41] B. Kang, Y. Kim, W. J. Yoo, C. Lee. Ultrahigh photoresponsive device based on ReS₂/graphene heterostructure. Small, 14, 1802593(2018).

[42] H. Li, L. Ye, J. B. Xu. High-performance broadband floating-base bipolar phototransistor based on WSe₂/BP/MoS₂ heterostructure. ACS Photon., 4, 823-829(2017).

[43] F. Wang, Z. X. Wang, K. Xu, F. M. Wang, Q. S. Wang, Y. Huang, L. Yin, J. He. Tunable GaTe-MoS₂ van der Waals p-n junctions with novel optoelectronic performance. Nano Lett., 15, 7558-7566(2015).

[44] S. Namgung, J. Shaver, S. H. Oh, S. J. Koester. Multimodal photodiode and phototransistor device based on two-dimensional materials. ACS Nano, 10, 10500-10506(2016).

[45] N. J. Huo, G. Konstantatos. Ultrasensitive all-2D MoS₂ phototransistors enabled by an out-of-plane MoS₂ PN homojunction. Nat. Commun., 8, 6(2017).

[46] Y. T. Lee, J. H. Kang, K. Kwak, J. Ahn, H. T. Choi, B. K. Ju, S. H. Shokouh, S. Im, M. C. Park, D. K. Hwang. High-performance 2D MoS₂ phototransistor for photo logic gate and image sensor. ACS Photon., 5, 4745-4750(2018).