Cathodoluminescence characterization analysis and growth of ZnTe:Cu under Microgravity

WANG Reng; LU Ye; JIAO Cui-Ling; LI Xiang-Yang

doi:10.11972/j.issn.1001-9014.2018.01.010

[1] Wang Reng, Ge Jin, Fang Wei Zheng, et al. THz emission and detection from ZnTe bulk crystals grown by Te solution method［J］. J Infrared Millim. Waves, 2009, 28(1):1-4.

[2] Guo Q, Kume Y, Fukuhara Y J. Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy［J］. Solid State Communications,2007, 141: 188-191.

[3] Tanaka T, Kume Y, Nishio M. Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates［J］. Jpn. J. Appl. Phys., 42, 2003: 362-364.

[6] Turchinovich D. Study of Ultrafast Polarization and Carrier Dynamics in Semiconductor Nanostructures: a THz Spectroscopy Approach［D］, Ph.D. Thesis, Albert-Ludwigs-University, 2004:30.

[8] Fikry El Akkad and Maneesh Mathai. Structural and luminescence properties of heavily doped radio-frequency-sputtered ZnTe:Cu thin films［J］. Journal of Applied Phaysics, 2015(118): 095706.

[9] Joanne W L, Yim, Deirdre Chen, Gregory F. Brown, and Junqiao Wu, Synthesis and Ex Situ Doping of ZnTe and ZnSe［J］. Nanostructures with Extreme Aspect Ratios, Nano Res(2009)2:931-937.

[10] Mycielski A. Szadkowski, A. usakowska, E. , Parameters of substrates-single crystals of ZnTe and Cd1-xZnxTe (x＝0.25), obtained by physical vapor transport technique (PVT) ［J］. J. Crystal. Growth, 1999,197: 423-426.

[11] Reng Wang, Weizheng Fang, Shixin Yuan, Pei Zhao, Caihong Zhang, Lei Zhang, Huier Zhang, Shuhong Hu, Xuemin Shen, Ning Dai. Growth and Characterization of oriented ZnTe single crystal［C］. Proc. SPIE, 2007 (6835):683519.

[14] Reng Wang， Xiangyang Li. Growth of II-VI semiconductor materials under microgravity［C］. Asian Microgravity Pre-Symposium.2012: 39-41.

[16] Dieter K. Schroder. Semiconductor material and device characterization［M］. Wiley. 1998.

[17] Iribarren A. Fern andez, P. ,Piqueras J. . Cathodoluminescence characterization of ZnO:Te microstructures obtained with ZnTe and TeO2 doping precursors［J］. Superlattices and Microstructures, 2008:(43)600-604.

[18] Kozlovsky V.I. Krysa, A.B. ,Korostelin Yu.V. , MBE growth and characterization of ZnTe epilayers and ZnCdTe/ZnTe structures on GaAs(100) and ZnTe(100) substrates［J］. Journal of Crystal Growth, 2000: (214/215) 35-39.

[19] Nishio M. ,Saito K. Nakatsuru,, Y. Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE［J］. Journal of Crystal Growth, 2017,468(15):666-670.