• Infrared and Laser Engineering
  • Vol. 47, Issue 5, 503001 (2018)
Li Xiang1, Wang Hong1, Qiao Zhongliang1、2, Zhang Yu3, Xu Yingqiang3, Niu Zhichuan3, Tong Cunzhu4, and Liu Chongyang5
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
  • 5[in Chinese]
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    DOI: 10.3788/irla201847.0503001 Cite this Article
    Li Xiang, Wang Hong, Qiao Zhongliang, Zhang Yu, Xu Yingqiang, Niu Zhichuan, Tong Cunzhu, Liu Chongyang. Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser[J]. Infrared and Laser Engineering, 2018, 47(5): 503001 Copy Citation Text show less
    References

    [1] Scholle K, Lamrini S, Koopmann P, et al. Frontiers in guided wave optics and optoelectronics[J]. Optical Engineering,2010, 2(10): 3033.

    [2] Geng J, Jiang S. Fiber lasers: The 2 μm market heats up[J]. Optics and Photonics News, 2014, 25(7): 34-41.

    [4] Rong J, Xing E, Zhang Y, et al. Low lateral divergence 2 μm InGaSb/AlGaAsSb broad-area quantum well lasers[J]. Optics Express, 2016, 24(7): 7246-7252.

    [5] Li X, Wang H, Qiao Z, et al. Design and analysis of 2 μm InGaSb/GaSb quantum well lasers integrated onto silicon-on-insulator(SOI) waveguide circuits through an Al2O3 bonding layer[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2016, 22(6): 1500507.

    [6] Ikyo A B, Marko I P, Hild K, et al. Temperature stable mid-infrared GaInAsSb/GaSb vertical cavity surface emitting lasers (VCSELs)[J]. Scientific Reports, 2016, 6: 19595.

    [7] Li X, Wang H, Qiao Z, et al. Temperature-and current-dependent spontaneous emission study on 2 μm InGaSb/AlGaAsSb quantum well lasers[J]. Japanese Journal of Applied Physics, 2017, 56(5): 050310.

    [8] Polyakov A Y, Stam M, Milnes A G, et al. Electrical properties of GaSb Schottky diodes and pn junctions[J]. Materials Science and Engineering: B, 1992, 12(4): 337-343.

    [9] Rhoderick E H, Williams R H. Metal -Semiconductor Contacts[M]. 2nd ed. Oxford: Oxford University Press, 1988.

    [10] Liu C, Wang H, Meng Q, et al. Modal gain and photoluminescence investigation of two-state lasing in GaAs-Based 1.3 μm InAs/InGaAs quantum dot lasers[J]. Applied Physics Express, 2013, 6(10): 102702.

    [12] Eliseev P G, Maege J, Erbert G, et al. Threshold drop of the differential resistance of stripe quantum-well InGaAs/GaAIAs lasers[J]. Quantum Electronics, 1995, 25(2): 99.

    [13] Lee G W, Shim J I, Shin D S. On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes[J]. Applied Physics Letters, 2016, 109(3): 031104.

    Li Xiang, Wang Hong, Qiao Zhongliang, Zhang Yu, Xu Yingqiang, Niu Zhichuan, Tong Cunzhu, Liu Chongyang. Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser[J]. Infrared and Laser Engineering, 2018, 47(5): 503001
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