(Bi,Er)2Ti2O7 dielectric thin films are synthesized on indium-tin-oxide (ITO) glass substrates by the pulse laser deposition method. The pure Bi2Ti2O7 thin films can be obtained when the deposition temperature is controlled in the range of 500～600 ℃. The range of dielectric constant of (Bi,Er)2Ti2O7 thin film is 166～178 and the dielectric loss is less than 0.05 at room temperature. When the frequency and the temperature are changing, the dielectric constant remains stable. The spectral analysis shows that the up-conversion luminescence spectra of thin films contain two green light emission bands centered at 527 nm and 548 nm and a red light emission band centered at 660 nm. These emission bands correspond to the transition of Er3+ from 2H11/2, 4S3/2 and 4F9/2 levels to the ground level 4I15/2. (Bi,Er)2Ti2O7 thin films can be considered as a kind of multifunctional material, which will be widely applied to transparent optoelectronic devices in the future.