Two kinds of LD pumped Nd: GdVO₄ crystal actively Q- switched passively mode- locked lasers are reported. Using self-mode-locking and semiconductor saturable absorber output coupler mode-locking respectively combined with electro-optic actively Q-switch, stably Q-switched mode-locked laser is obtained. The actively Qswitched self-mode-locked laser has a Q-switched envelope repetition rate of 3 kHz and a pulse duration of about 1.2 μs, while the self-mode-locked pulses within the Q-switched envelope have a repetition rate of 159 MHz and an estimated pulse duration of 963 ps. The actively Q-switched semiconductor saturable absorber output couple mode-locked laser has a Q-switched envelope repetition rate of 10 kHz and a pulse duration of about 300 ns, while the repetition rate of mode-locked pulses within the Q-switched envelope is 159 MHz and the pulse duration is about 491 ps. The mathematical expressions of the nonlinear loss of self-mode-locking equivalent fast saturable absorber and semiconductor saturable absorber output coupler are presented respectively. Using the fluctuation mechanism, the rate equations of electro- optic actively Q- switched self- mode- locked laser and electro- optic actively Qswitched semiconductor saturable absorber output couple mode-locked laser are presented. Through the comparison of the output characteristics and the rate equations for these two Q-switched mode-locked lasers, the superposition of the two modulation effects is analysed.