Experimental Research on Transient Dose Rate Effect of DC/DC Converter Based on BiCMOS Controller with Feature of 0.35 μm

CHENG Ming; ZOU Huachang; ZHANG Chunya; LUO Ding

doi:10.13911/j.cnki.1004-3365.210422

Journals >Microelectronics >Volume 52 >Issue 6 >Page 1039 > Article

Microelectronics
Vol. 52, Issue 6, 1039 (2022)

Experimental Research on Transient Dose Rate Effect of DC/DC Converter Based on BiCMOS Controller with Feature of 0.35 μm

CHENG Ming, ZOU Huachang, ZHANG Chunya, and LUO Ding

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[in Chinese]

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DOI: 10.13911/j.cnki.1004-3365.210422 Cite this Article

CHENG Ming, ZOU Huachang, ZHANG Chunya, LUO Ding. Experimental Research on Transient Dose Rate Effect of DC/DC Converter Based on BiCMOS Controller with Feature of 0.35 μm[J]. Microelectronics, 2022, 52(6): 1039 Copy Citation Text

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References

[6] NIKIFOROV A Y, SKOROBOGATOV P K. Dose rate laser simulation tests adequacy: shadowing and high intensity effects analysis ［J］. IEEE Trans Nucl Sci, 1996, 43(6): 3115-3121.

[7] KING E E, AHLPORT B, TETTEMER G, et al. Transient radiation screening of silicon device using backside laser irradiation ［J］. IEEE Trans Nucl Sci, 1982, NS-29(6): 1809-1815.

[8] DEVAL Y, LAPUYADE H. Evaluation of a design methodology dedicated to dose-rate-hardened linear intergrated circuits ［J］. IEEE Trans Nucl Sci, 2002, 49: 1468-1473.

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