• Chinese Physics B
  • Vol. 29, Issue 10, (2020)
Wei-Tao Yang1,4, Yong-Hong Li1,†, Ya-Xin Guo1, Hao-Yu Zhao1..., Yang Li1, Pei Li1, Chao-Hui He1, Gang Guo2, Jie Liu3, Sheng-Sheng Yang5 and Heng An5|Show fewer author(s)
Author Affiliations
  • 1School of Nuclear Science & Technology, Xi’an Jiaotong University, Xi’an 70049, China
  • 2National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 10413, China
  • 3Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 70000, China
  • 4Dipartimento di Automatica e Informatica, Politecnico di Torino, Torino 10129, Italy
  • 5Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China
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    DOI: 10.1088/1674-1056/ab99b8 Cite this Article
    Wei-Tao Yang, Yong-Hong Li, Ya-Xin Guo, Hao-Yu Zhao, Yang Li, Pei Li, Chao-Hui He, Gang Guo, Jie Liu, Sheng-Sheng Yang, Heng An. Investigation of single event effect in 28-nm system-on-chip with multi patterns[J]. Chinese Physics B, 2020, 29(10): Copy Citation Text show less
    SEU cross sections in HI-13 irradiation.
    Fig. 1. SEU cross sections in HI-13 irradiation.
    SEFI cross sections in the HI-13 irradiation.
    Fig. 2. SEFI cross sections in the HI-13 irradiation.
    The detected upset cells in the HIRFL irradiation.
    Fig. 3. The detected upset cells in the HIRFL irradiation.
    The cross sections of the tests in HIRFL irradiation.
    Fig. 4. The cross sections of the tests in HIRFL irradiation.
    The detected currents in the HIRFL irradiation, (a) the currents are higher than the normal case, (b) a part of the currents are less than the normal case.
    Fig. 5. The detected currents in the HIRFL irradiation, (a) the currents are higher than the normal case, (b) a part of the currents are less than the normal case.
    The Weibull fitting from the irradiation tests.
    Fig. 6. The Weibull fitting from the irradiation tests.
    SEFI cross section of different tests in HIRFL irradiation.
    Fig. 7. SEFI cross section of different tests in HIRFL irradiation.
    FacilityIonsEnergy/MeVLET/MeV⋅cm2⋅mg−1Range in silicon/μm
    Cl16013.146.0
    HI-13Si1359.350.7
    C801.7127.1
    HIRFLTa1697.478.399.3
    Table 1. The used ions in the heavy ion irradiation.
    LET/MeV⋅cm2⋅mg−1CPU patternData testSEUSEFI
    13.1AMPStatic50444
    SPDynamic17533
    9.3AMPStatic25238
    SPDynamic12426
    1.7AMPStatic917
    SPDynamic404
    Table 2. The detected errors in the HI-13 irradiation.
    CPU patternData testFluence/cm−2
    AMPDynamic2.1 × 105
    SPStatic3.0 × 105
    Dynamic2.5 × 105
    Table 3. The parameters of the tests in HIRFL irradiation.
    CPU patternData testSEUSEFI
    AMPDynamic28447
    SPStatic127733
    Dynamic25441
    Table 4. The detected SEE in HIRFL irradiation.
    LET/MeV⋅cm2⋅mg−113.19.31.7
    Cross section ratio (static/dynamic)2.882.032.28
    Table 5. The cross sections ratio between static and dynamic tests in HI-13 irradiation.
    σsat/cm2⋅bit−1Lth/MeV⋅cm2⋅mg−1WS
    Static cross section fitting1.9 × 10−80.55351.98
    Dynamic cross section fitting3.7 × 10−90.55291.87
    Table 6. The Weibull function parameters for both fittings.
    Bit error/bit−1⋅day−1Device error/device−1⋅day−1
    Static2.46 × 10−85.16 × 10−2
    Dynamic1.35 × 10−82.83 × 10−2
    Table 7. The predicted SoC orbit soft error rate.
    Wei-Tao Yang, Yong-Hong Li, Ya-Xin Guo, Hao-Yu Zhao, Yang Li, Pei Li, Chao-Hui He, Gang Guo, Jie Liu, Sheng-Sheng Yang, Heng An. Investigation of single event effect in 28-nm system-on-chip with multi patterns[J]. Chinese Physics B, 2020, 29(10):
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