[1] Jun Sung Jin, Kim Yong Sung, Lee Jai Chan. Dielectric properties of strained (BaSr)TiO3 thin films epitaxially grown on Si with thin Yttria-Stabilized Zirconia buffer layer. Appl.Phys.Lett., 2001, 78:2542

[2] Ngo E, Joshi P C, Cole M W, et al. Electrophoretic deposition of pure and Mgo-modified Ba0.7Sr0.3TiO3 thick films for tunable microwave devices. Appl.Phys.Lett., 2001, 79: 248

[3] Hayashi Takashi, Tanaka Takashi. Preparation and dielectric properties of SrTiO3/BaTiO3 multilayer thin films by Sol-Gel method. Jpn.J.Appl.Phys., 1995, 34: 5100

[5] McNeal Mark P, Jang Sei-Joo, Newnham Robert E. Improvements in tenability of Ba0.5Sr0.5TiO3 thin films by use of metaloganic chemical vapor deposited (Ba,Sr)RUO3 interfacial layers. Appl.Phys.Lett., 2001, 79: 1012

[9] Joshi P C, Krupariclhi S B. Structural and electrical characteristics of SrTiO3 thin films for dynamic random access memory applications. J.Appl.Phys., 1993, 73 :7627

[10] Hwang Cheol Seong, Lee Byoung Taek, Kang Chang Seok. Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba,Sr)TiO3 thin film. J.Appl.Phys., 1999, 84: 287

[11] Saha S, Kruparidhi S B. Large reduction of leakage current by graded-layer La doping in Ba0.5Sr0.5TiO3 thin films. Appl.Phys.Lett., 2001, 79: 111