• Journal of Infrared and Millimeter Waves
  • Vol. 22, Issue 1, 71 (2003)
[in Chinese]1, [in Chinese]2, [in Chinese]3, and [in Chinese]1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. (Ba0.5Sr0.5)TiO3 THIN FILM'S PREPARATION AND IT'S ELECTRIC CHARACTERISTICS[J]. Journal of Infrared and Millimeter Waves, 2003, 22(1): 71 Copy Citation Text show less

    Abstract

    Ba 0.5Sr 0.5)TiO 3 ferroelectric thin films with pure perovskite structure and good dielectric and insulating properties were prepared by Sol-Gel processing. It was found that the purity and crystallinity and dielectric constant of (Ba 0.5Sr 0.5)TiO 3 ferroelectric thin films increased and the leakage current density decreased with the increase of temperature. Films treated at 750℃ for 1h showed good and stable properties with a dielectric constant of 250 and a dielectric loss of 0.030 and a leakage current density of 6.9×10 -8A/cm2. The high dielectric constant, low dielectric loss and leakage current density may originate from the good Purity and crystallinity of the films. The J-U characteristics of films indicated that the conduction of the films obeyed the mechanism of the space-charge-limited injection model.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. (Ba0.5Sr0.5)TiO3 THIN FILM'S PREPARATION AND IT'S ELECTRIC CHARACTERISTICS[J]. Journal of Infrared and Millimeter Waves, 2003, 22(1): 71
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