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    Journals >Journal of Semiconductors >Volume 46 >Issue 2 >Page 021402 > Article
    • Journal of Semiconductors
    • Vol. 46, Issue 2, 021402 (2025)
    Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications
    Xiaohan Meng1,3, Runsheng Gao1,2,*, Xiaojian Zhu1,2,**, and Run-Wei Li1,2
    Author Affiliations
  • 1CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 2Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 3School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
    • show less
    DOI: 10.1088/1674-4926/24100025 Cite this Article
    Xiaohan Meng, Runsheng Gao, Xiaojian Zhu, Run-Wei Li. Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications[J]. Journal of Semiconductors, 2025, 46(2): 021402 Copy Citation Text show less
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    Xiaohan Meng, Runsheng Gao, Xiaojian Zhu, Run-Wei Li. Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications[J]. Journal of Semiconductors, 2025, 46(2): 021402
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