• Chinese Journal of Quantum Electronics
  • Vol. 21, Issue 2, 269 (2004)
[in Chinese]1、*, [in Chinese]2、3, [in Chinese]3、4, and [in Chinese]3
Author Affiliations
  • 1[in Chinese]
  • 2Xiao-bin
  • 3SiCLAB,ECE Deptment.,Rutgers University,Piscataway,NJ08854,USA
  • 4Feng
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication of MSM structure UV photodetector on 4H-SiC[J]. Chinese Journal of Quantum Electronics, 2004, 21(2): 269 Copy Citation Text show less
    References

    [1] Anikin M,Andreev A N,Pyatko S N,et al.UV photodetectors in 6H-SiC [J].Sensors & Actuators A-Physical,1992,33(1-2):91-93.

    [2] Yan F,Qin C,Zhao J,et al.Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2 degree positive bevel [J].Electronics Letters,2002,38(7):335-336.

    [3] Edmond J A,Kong Huashuang,Carter C H J.Blue LEDs,UV photodiodes and high-temperature rectifiers in 6H-SiC [J].Physica B:Condensed Matter,1993,185(1-4):453-460.

    [4] Luo Y F,Zhao Y,Olsen J H.4H-SiC visible blind UV avalanche photodiode [J].Electronics Lett.,1999,35(11):929-930.

    [5] Zhang Y G,Li A Z,Milnes A G.Metal-semiconductor-metal ultraviolet photodetectors using 6H-SiC [J].IEEE Photonics Technology Lett.,1997,9(3):363-364.

    [6] Frojdh C,Thungstrom G,Nilsson H E,et al.UV-sensitive photodetectors based on metal-semiconductor contacts on 6H-SiC [J].Physica Scripta,169-171.

    [7] Torvik J T,Pankove J I,Van Zeghbroeck B J.Comparison of GaN and 6H-SiC p-i-n photodetectors with excellent ultraviolet sensitivity and selectivity [J].IEEE Transactions on Electron Devices,1999,46(7):1326-1331.

    [8] Wu Z Y,Yan F,Xin X B,et al.Demonstration of the first metal-semiconductor-metal ultraviolet photodetectors on 4H-SiC [J].Material Science Forum,Accepted .

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication of MSM structure UV photodetector on 4H-SiC[J]. Chinese Journal of Quantum Electronics, 2004, 21(2): 269
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