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    Journals >Acta Physica Sinica >Volume 69 >Issue 13 >Page 136103-1 > Article
    • Acta Physica Sinica
    • Vol. 69, Issue 13, 136103-1 (2020)
    Mechanisms of alpha particle induced soft errors in nanoscale static random access memories
    Zhan-Gang Zhang1, Bing Ye2, Qing-Gang Ji2, Jin-Long Guo2, Kai Xi3, Zhi-Feng Lei1、*, Yun Huang1、*, Chao Peng1, Yu-Juan He1, Jie Liu2, and Guang-Hua Du2
    Author Affiliations
  • 1Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China
  • 2Material Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  • 3Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    • show less
    DOI: 10.7498/aps.69.20201796 Cite this Article
    Zhan-Gang Zhang, Bing Ye, Qing-Gang Ji, Jin-Long Guo, Kai Xi, Zhi-Feng Lei, Yun Huang, Chao Peng, Yu-Juan He, Jie Liu, Guang-Hua Du. Mechanisms of alpha particle induced soft errors in nanoscale static random access memories[J]. Acta Physica Sinica, 2020, 69(13): 136103-1 Copy Citation Text show less
    Schematic diagram of the test setup.
    Fig. 1. Schematic diagram of the test setup.
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    α particle distribution on the silicon surface of the 65 nm SRAM.
    Fig. 2. α particle distribution on the silicon surface of the 65 nm SRAM.
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    α particle distribution on the silicon surface of the 90 nm SRAM.
    Fig. 3. α particle distribution on the silicon surface of the 90 nm SRAM.
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    Impact of initial data pattern on SEU cross section.
    Fig. 4. Impact of initial data pattern on SEU cross section.
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    Reverse analysis results of the 65 nm SRAM: (a) Cross section; (b) memory area image.
    Fig. 5. Reverse analysis results of the 65 nm SRAM: (a) Cross section; (b) memory area image.
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    TRIM simulation results: (a) The propagation trajectory of alpha particles in the device; (b) the alpha particle trajectory from the cross-sectional view of the device (the initial incident position of the particle is at the zero center).
    Fig. 6. TRIM simulation results: (a) The propagation trajectory of alpha particles in the device; (b) the alpha particle trajectory from the cross-sectional view of the device (the initial incident position of the particle is at the zero center).
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    3 D simulation model of the 65 nm device.
    Fig. 7. 3 D simulation model of the 65 nm device.
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    Deposited energy spectra in sensitive regions of devices at different incident angles.
    Fig. 8. Deposited energy spectra in sensitive regions of devices at different incident angles.
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    Relationship between LET value and energy of α particle in silicon material.
    Fig. 9. Relationship between LET value and energy of α particle in silicon material.
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    Relationship between single event upset cross section and critical energy at different incident angles.
    Fig. 10. Relationship between single event upset cross section and critical energy at different incident angles.
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    Single event upset cross section at different incident angles.
    Fig. 11. Single event upset cross section at different incident angles.
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    Schematic diagram of edge effect (not scaled)[20,21].
    Fig. 12. Schematic diagram of edge effect (not scaled)[20,21].
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    α粒子源Am-241
    放射率/粒子·2π–1·min–15.73 × 105
    尺寸圆柱体, Φ18 mm, 1 mm厚
    Table 1.

    Parameters of the radioactive source being used.

    使用的放射源参数

    器件类型型号厂商工艺尺寸/nm测试容量/Mb工作电压/V硅片尺寸
    DDR-II SRAMCY7C1318CYPRESS651.1251.85 mm × 8 mm
    QDR-II SRAMCY7C1412CYPRESS65181.85 mm × 8 mm
    SRAMCY7C1019DCYPRESS9013.32 mm × 2 mm
    Table 2.

    Parameters of the devices under test.

    被测器件参数

    器件测试容量/Mb粒子注量率/cm–2·s–1测试时长SEU数量SEU截面/cm2·bit–1
    CY7 C1318(65 nm)1.1251.33 × 1037 min 52 s2042.76 × 10–10
    CY7 C1412(65 nm)181.33 × 1033 min 41 s16132.91 × 10–10
    CY7 C1019 D(90 nm)17.42 × 10216 h1272.83 × 10–12
    Table 3.

    Test results of SEU cross section.

    SEU截面测试结果

    α粒子发射率等级发射率/cm–2·h–165 nm SRAM软错误率/FIT·Mb–190 nm SRAM软错误率/FIT·Mb–1
    ULA~0.0013.03 × 1022.97
    Low Alpha (LA)~0.013.03 × 10329.7
    Uncontrolled Alpha~206.06 × 1065.94 × 104
    Table 4.

    The α particle emissivity level and corresponding soft error rate.

    α粒子发射率等级及对应的软错误率

    粒子种类4300 m海拔处的软错误率/FIT·Mb–1占比(4300 m海拔)北京海平面处的软错误率/FIT·Mb–1占比(北京海平面)
    全部2356100%429100%
    α粒子30312.86%30370.63%
    高能中子205387.14%12629.37%
    热中子00%00%
    Table 5.

    Soft error rates of the 65 nm SRAM at the experimental site with an altitude of 4300 m and sea level of Beijing city being used. The contribution rates of α particle, high energy neutron and thermal neutron are analyzed, respectively.

    65 nm SRAM在4300 m海拔试验地点及北京海平面使用时的软错误率及α粒子、高能中子和热中子贡献占比

    器件存储单元尺寸灵敏区尺寸灵敏区厚度/μm重离子LET阈值/ MeV·cm2·mg-1临界能量/keV
    65 nm SRAM1 μm × 0.5 μm0.2 μm × 0.19 μm0.450.22[19]22.5[19]
    Table 6. [in Chinese]
    Abstract
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    Zhan-Gang Zhang, Bing Ye, Qing-Gang Ji, Jin-Long Guo, Kai Xi, Zhi-Feng Lei, Yun Huang, Chao Peng, Yu-Juan He, Jie Liu, Guang-Hua Du. Mechanisms of alpha particle induced soft errors in nanoscale static random access memories[J]. Acta Physica Sinica, 2020, 69(13): 136103-1
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