[1] Carmody M, Mallick S, Margetis J, et al. Appl. Phys. Lett., 2010, 96: 153502.
[2] Fulop J, Palfalvi L, Almasi G, et al. Journal of Optics Express, 2010, 18(12): 12311.
[3] Schlesinger T, Toney J, Yoon H, et al. Materials Science and Engineering: R, 2001, 32: 103.
[4] Babentsov V, Boiko V, Schepelskii A, et al. Journal of Luminescence, 2010, 130: 1425.
[5] Yang G, Bolotnikov E, Cui Y, et al. Applied Physics Letters, 2011, 98: 261901.
[6] Xu Y, Jie W, Sellin J, et al. IEEE Transaction on Nuclear Science, 2009, 56: 2808.
[8] Schmidt T, Lischka K, Zulehner W. Physical Review B, 1992, 45(16): 8989.
[9] Hjelt K, Juvonen M, Tuomi T. et al. Physica Status Solidi(A), 1997, 162: 747.
[10] Garcia A, Remon A, Munoz V, et al. Journal of Crystal Growth, 1998, 191: 685.
[11] Varshni Y. Physica, 1967, 34: 1149.
[12] Properties of Wide Bandgap Ⅱ-Ⅵ Semiconductors, edited by B. Rameshwar, Institution of Engineering and Technology, London, 1997.
[13] Shin H, Sun C. Journal of Crystal Growth, 1998, 186: 354.
[14] Wang T, Jie W, Zhang J, et al. Journal of Crystal Growth, 2007, 304: 313.
[15] Fougeres P, Chibani L, Hageali M, et al., Journal of Crystal Growth, 1999, 197: 641.
[16] Zappettini A, Marchini L, Zha M, et al. Cryst. Eng. Comm., 2013, 15: 2227.
