CHARACTERISTICS OF HIGH BRIGHTNESS InGaN-BASED WHITE LIGHT EMITTING DIODES

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 21 >Issue 5 >Page 390 > Article

Journal of Infrared and Millimeter Waves
Vol. 21, Issue 5, 390 (2002)

CHARACTERISTICS OF HIGH BRIGHTNESS InGaN-BASED WHITE LIGHT EMITTING DIODES

[in Chinese]^1、2, [in Chinese]^1、2, [in Chinese]^1、2, and [in Chinese]^1、2

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. CHARACTERISTICS OF HIGH BRIGHTNESS InGaN-BASED WHITE LIGHT EMITTING DIODES[J]. Journal of Infrared and Millimeter Waves, 2002, 21(5): 390 Copy Citation Text

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References

[1] Kamura S, Senoh M, Iwasa N, et al. Superbright green InGaN single-quantum-well-structure light-emitting diodes. Jpn.J.Appl.Phys.,1995,34:L1332-1335

[2] Mukai T, Narimatsu H, Nakamure S, et al. Amber InGaN-based light-emitting diodes operable at high ambient temperatures.Jpn.J.Appl.Phys.,1998,37:L479-481

[3] Fumitomo Hide, Peter Kozodoy,Steven P, et al. White light from InGaN*/conjugated polymer hybrid light-emitting diodes. Appl.Phys.Lett.,1997,70(20):2664-2666

[4] Tetsushi Tamura, Tatsumi Setomoto, Tsunemasa Taguchi. Illumination characteristics of lighting array using 10 candela-class white LEDs under AC 100V operation. Journal of Luminescence, 2000,87-89;1180-1182

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. CHARACTERISTICS OF HIGH BRIGHTNESS InGaN-BASED WHITE LIGHT EMITTING DIODES[J]. Journal of Infrared and Millimeter Waves, 2002, 21(5): 390

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