• Journal of Infrared and Millimeter Waves
  • Vol. 21, Issue 5, 390 (2002)
[in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, and [in Chinese]1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. CHARACTERISTICS OF HIGH BRIGHTNESS InGaN-BASED WHITE LIGHT EMITTING DIODES[J]. Journal of Infrared and Millimeter Waves, 2002, 21(5): 390 Copy Citation Text show less

    Abstract

    High brightness white light emitting diodes(Φ3) were fabricated by using the self produced InGaN?GaN blue LED chip and YAG:Ce 3+ fluorescence. The luminous intensity, chromaticity coordinate, I V, color temperature and color rendering index were studied. The experiment result shows that in room temperature, at forward current 20mA, luminous intensity of the white LED is from 1.1cd to 2.3cd, when forward current is under 3.5V, the chromaticity coordinate is (0.28,0.34), and the color rendering index is about 70.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. CHARACTERISTICS OF HIGH BRIGHTNESS InGaN-BASED WHITE LIGHT EMITTING DIODES[J]. Journal of Infrared and Millimeter Waves, 2002, 21(5): 390
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