[1] Ho W Y, Surya C, Tong K Y,et al. Characterization of flicker noise in GaN-based MODFETs at low drain bias, IEEE Transactions on Electron Dev ices,1999,46: 1099-1104
[2] Klein P B, Freitas J A, Binari S C, et al. Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors,Appl. Phys. Lett.,1999,75: 4016-4018
[3] Nakamura S. Blue-green light-emitting-diodes and violet laser-diodes,Meter. Res. Bull.,1997,22(2): 29-35
[4] Shur M S, Khan M A. GaN/Algan heterostructure devices-photodetectors and field-effect transistors, Mater. Res. Bull.,1997,22(2): 44 -48
[5] Yoshida S, Suzuki J. Characterization of a GaN bipolar junction transistor after operation at 300K for over 300H, Appl. Phys.,1999,85:7931-7936
[6] Nakamura S, Senoh M, Nagahama S, et al. Continuous-wave operati on of Ingan/GaN/Algan-based laser-diodes grown on GaN substrates,Appl. Phys. Lett.,1998,72: 2014-2017
[7] Chen X L, Cao Y G, Lan Y C, et al. Synthesis and structure of nanocrystal-assembled bulk GaN,J.Cryst. Growth,2000,209: 208-21 2
[9] Rehr J J, Zabinsky S I, Albers R C. High-order multiple scattering calculations of X-ray-absorption fine structure,Phys. Rev.Lett.,1992,69: 3397-3400
[10] Wu L W, Wei S Q, Wang B,et al. Interlayer microstructure of sputtered Mo/Si multilayers,J.Phys.CM.,1997,9: 3521-3128
[11] Wells A F. Structural Inorganic Chemistry. London: Oxford University Press,1975,1012
[12] Katsikini M, Rossner H, Fieber-Erdmann M,et al. Gallium K-edge EXAFS measurements on cubic and hexagonal GaN,J.Synchrotron Rad.,1999,6: 561-563
