MBE and Dopping Control of ZnSe Single Crystal Films

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 17 >Issue 2 >Page 139 > Article

Chinese Journal of Quantum Electronics
Vol. 17, Issue 2, 139 (2000)

MBE and Dopping Control of ZnSe Single Crystal Films

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. MBE and Dopping Control of ZnSe Single Crystal Films[J]. Chinese Journal of Quantum Electronics, 2000, 17(2): 139 Copy Citation Text

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Abstract

It is compulsory to realize the accurate control of the growth process of each material layer before a ZnSe-based laser diode could be fabricated, such as crystal quality control, doping level control and growth rate control. ZnSe is the fundamental material for blue/green laser diodes. Reported here are the primary results of an attempt on the crystal quality control, the doping level control and the growth rate control of ZnSe by MBE technology.

Keywords

doping control growth control MBE ZnSe

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