It is compulsory to realize the accurate control of the growth process of each material layer before a ZnSe-based laser diode could be fabricated, such as crystal quality control, doping level control and growth rate control. ZnSe is the fundamental material for blue/green laser diodes. Reported here are the primary results of an attempt on the crystal quality control, the doping level control and the growth rate control of ZnSe by MBE technology.