[1] Shi Yanli, Guo Qian, Li Long, et al. Visible-extended InP/InGaAs wide spectrum response infrared detectors[J]. Infrared and Laser Engineering, 2015, 44(11): 3177-3180. (in Chinese)

[2] Shao Xiumei, Gong Haimei, Li Xue, et al. Developments of high performance short-wave infrared InGaAs focal plane Detectors[J]. Infrared Technology, 2016, 38(8): 629-635. (in Chinese)

[3] Zang Yonggang, Gu Yi, Wang Kai, et al. Fabrication of wavelength extended (1.7-2.7 μm) InGaAs high speed photodetectors[J]. Infrared and Laser Engineering, 2008, 37(1): 38-41. (in Chinese)

[4] Wei Peng, Huang Songlei, Li Xue, et al. Back illuminated InGaAs detector arrays with extended-wavelength to 2.4 μm[J]. J Infrared Millim Waves, 2013, 32(3): 214-219. (in Chinese)

[5] Li Yongfu, Tang Hengjing, Zhang Kefeng, et al. Temperature-dependent characteristics study of 2.6 μm planar-type InGaAs infrared detector[J]. Laser and Infrared, 2009, 39(6): 612-617. (in Chinese)

[6] Kuan C H, Lin R M, Tang S F. Analysis of the dark current in the bulk of InAs diode detectors[J]. Journal of Applied Physics, 1996, 80(9): 5454-5458.

[7] Robert F Pierret. Semiconductor Devices [M]. 2nd ed. Hoboken: John Wiley & Sons Incorporation, 1996.

[8] Lars Z, Joachim J, Stefan D, et al. Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detector [J]. Applied Physics Letters, 2003, 82(17): 2838-2840.

[9] Sjal P, Roy J B, Basu P K. Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1-xAs[J]. Journal of Applied Physics, 1990, 69(2): 827-829.

[10] Levinshtein M, Rumyantsev S, Shur M. Handbook series on semiconductor parameters[J]. World Scientific, 1996, 24(1): 196-197.