• Infrared and Laser Engineering
  • Vol. 36, Issue 5, 693 (2007)
[in Chinese]*, [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. New device on measuring thin film stress by laser reflect measurement[J]. Infrared and Laser Engineering, 2007, 36(5): 693 Copy Citation Text show less
    References

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    [6] YTATSUMI,MSHIGI,MHIRATE.Measurment of youny's modulus in amorphous ailicon whiskers[J].Jpn J Appl Phys,1978,17(8):1455-1466.

    [7] MIYAYI M,FUNAKOSBL N.Internal stress and thermal expansion coefficient of GDs-si.filmes[J].Jpn J Appl Phys,1981,20(1):289-292.

    [8] HEARNE S,CHARSON E,HAN J,et al.Stress evolution during metalorganic chemical vapor deposition of GaN[J].Appl Phys Lett,1999,74(3):356-361.

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    [in Chinese], [in Chinese], [in Chinese]. New device on measuring thin film stress by laser reflect measurement[J]. Infrared and Laser Engineering, 2007, 36(5): 693
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