Fabrication and research of very thin Si membrane for the high sensitivity infrared detector

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 34 >Issue 1 >Page 23 > Article

Infrared and Laser Engineering
Vol. 34, Issue 1, 23 (2005)

Fabrication and research of very thin Si membrane for the high sensitivity infrared detector

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication and research of very thin Si membrane for the high sensitivity infrared detector[J]. Infrared and Laser Engineering, 2005, 34(1): 23 Copy Citation Text

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References

[2] Sato K,Shikida M,Matsushima Y.Characterization of orientationdependent etching properties of single-crystal silicon: effects of KOH concentration[J].Sensors and Actuators A, 1998,64: 87-93.

[4] Huang C ,Najafi K.Fabrication of ultrathin P++ silicon microstructurcs using ion implantation and boron etch-stop[J].Journal of Microelectromechanical Systems, 2001,10(4): 532-537.

[6] Moldovan C,Iosub R,Dascalu D,et al. An investigation of an alka line system for silicon anistropic etching[A]. Proceedings of the Workshop of Physical Chemistry of Wet Chemical Etching of Silicon [C].Netherland: Holten, 1998,1.21-22.

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