• Chinese Journal of Quantum Electronics
  • Vol. 21, Issue 4, 429 (2004)
[in Chinese]1、*, [in Chinese]2, and [in Chinese]1
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  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Study on linear and third-order nonlinear optical absorption in special asymmetric quantum wells[J]. Chinese Journal of Quantum Electronics, 2004, 21(4): 429 Copy Citation Text show less
    References

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    [3] Wang Guanghui, et al. Excitonic effects on the third-harmonic generation in parabolic quantum dots [J]. J. Phys.:Condens. Matter, 2001,13: 8197-8206.

    [4] Kuhn K J, Lyengar G U, Yee S. Free carrier induced changes in the absorption and refractive index for intersubband optical transitions in AlxGaAs1-x/GaAs/AlxGaAs1-x quantum wells [J]. J. Appl. Phys., 1991, 70 (9): 5010-5017.

    [5] Rosencher E, Bois Ph.. Model system for optical nonlinearities: asymmetric quantum wells [J]. Phys. Rev. B,1991, 44(20):1135-1137.

    [7] Dingle R, Wiegmann W, Henry C H. Quantum states of confined carries in very thin AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures [J]. Phys. Rev. lett., 1974, 33: 827-833.

    [8] Levine B F, Malker R J, et al. Strong 8.2μm infrared intersubband absorption in doped GaAs/AlAs quantum well wave guide [J]. Appl. Phys. Lett., 1987, 50: 27375-27377.

    [9] Herbert L E, Weiss B L. The optical properties of AlGaAs/GaAs hyperbolic quantum well structures [J]. J. Appl.Phys., 1991, 70(2): 1054-1056.

    [10] Ahn D, Chuang S L. Nonlinear intersubband optical absorption in a semiconductor quantum well [J]. J. Appl.Phys.,1987, 62(7): 3052-3054.

    [11] Rappen T, Schroder J, Leisse A, et al. Nonlinear absorption for two-dimensional magnetoexcitons in InxGa1-xAs/InyAl1-yAs quantum wells [J]. Phys. Rev. B, 1991, 44: 13093-13096.

    [12] Schmid U, Humlicek J, Lukes F, et al. Optical transition in strained Ge/Si superlattices [J]. Phys. Rev. B, 1992,45: 6793-6801.

    [in Chinese], [in Chinese], [in Chinese]. Study on linear and third-order nonlinear optical absorption in special asymmetric quantum wells[J]. Chinese Journal of Quantum Electronics, 2004, 21(4): 429
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