Design and Fabrication of High Power 640 nm Red Laser Diodes

Zhu Zhen; Xiao Chengfeng; Xia Wei; Zhang Xin; Su Jian; Li Peixu; Xu Xiangang

doi:10.3788/lop55.081403

[1] Wang S L, Fang F Z. High power laser and its development［J］. Laser & Optoelectronics Progress, 2017, 54(9): 090005.

[2] Sumitomo H, Kajiyama S, Oguri H, et al. Uniform and high-power characteristics of AlGaInP-based laser diodes with 4-inch-wafer process technology［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2007, 13(5): 1170-1175.

[3] Sumpf B, Fricke J, Ressel P, et al. 20000 h reliable operation of 100 μm stripe width 650 nm broad area lasers at more than 1.1 W output power［J］. Semiconductor Science and Technology, 2011, 26(10): 105011.

[4] Sumpf B, Zorn M, Staske R, et al. High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%［J］. Proceedings of SPIE, 2006, 6133: 61330D.

[5] Shimada N, Yukawa M, Shibata K, et al. 640-nm laser diode for small laser display［J］. Proceedings of SPIE, 2009, 7198: 719806.

[6] Imanishi D. High-temperature operation of 640 nm wavelength high-power laser diode arrays［J］. Japanese Journal of Applied Physics, 2017, 56(3): 032702.

[7] Kuramoto K, Nishida T, Abe S, et al. High power operation of AlGaInP red laser diode for display applications［J］. Proceedings of SPIE, 2015, 9348: 93480H.

[8] Zhao Z T, Zhang H, Zou Y G, et al. Design and research of side lighted fiber of laser backlight source in liquid crystal display［J］. Chinese Journal of Lasers, 2017, 44(3): 0301004.

[9] Xu M F, Ding J W, Hu P, et al. Affects of mutli-apertures mask on formation of statistically independent speckle image［J］. Chinese Journal of Lasers, 2017, 44(1): 0101005.

[10] Qian L Y, Zhu X B, Chen J, et al. Speckle suppression in laser projection optical path［J］. Optics & Optoelectronic Technology, 2017, 15(5): 62-66.

[11] Peters M, Rossin V, Acklin B. High efficiency, high reliability laser diodes at JDS Uniphase［J］. Proceedings of SPIE, 2005, 5711: 142-151.

[12] Crump P, Erbert G, Wenzel H, et al. Efficient high-power laser diodes［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(4): 1501211.

[13] Yagi T, Shimada N, Nishida T, et al. Highly-reliable operation of 638-nm broad stripe laser diode with high wall-plug efficiency for display applications［J］. Proceedings of SPIE, 2013, 8640: 86400E.

[14] Xu Y. Fabrication of 650 nm high-power single-mode AlGaInP semiconductor laser diodes and its reliability analysis［D］. Beijing: Institute of Semiconductors, Chinese Academy of Sciences, 2005: 32-40.

[15] Kong Z Z, Cui B F, Huang X Z, et al. Study on performance improvement of high power semiconductor lasers［J］. Laser & Optoelectronics Progress, 2017, 54(7): 071403.

[16] Zhu Z, Zhang X, Xiao C F, et al. Fabrication of highly reliable watt-level 660 nm laser diodes［J］. Chinese Journal of Lasers, 2018, 45(5): 0501002.

[17] Sumpf B, Zorn M, Staske R, et al. 3-W broad area lasers and 12-W bars with conversion efficiencies up to 40% at 650 nm［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2007, 13(5): 1188-1193.

[18] Li H, Liang J Q, Liang Z Z, et al. Thermal analysis of AlGaInP-based LED microarray［J］. Acta Optica Sinica, 2016, 36(1): 0123001.