As a new photoelectric material, black silicon has been widely studied in photovoltaic solar cells, photodetectors, CMOS image sensors and other fields. Among them, the photoelectric detection technology of black silicon has attracted much attention, and important research progress has been made in recent years. In this review, the structure of black silicon materials has been firstly introduced, then the properties of black silicon materials prepared by femtosecond laser etching, wet etching and reactive ion etching are briefly discussed. Secondly, the structure and performance of different black silicon photodetectors based on the above preparation methods are summarized, then the application of black silicon devices in different fields is discussed. Finally, the photoelectric detection technology of black silicon is analyzed and prospected, and the future development direction of black silicon materials and devices is discussed.