A High Efficiency and High Linearity Power Amplifier for LTE

ZENG Lizhen; LI Jie; YIN Yihui; ZHAO Hao; XIE Zhiyuan; ZHANG Wei; CHEN Yonghe; SUN Tangyou; LIU Xingpeng; LI Qi; LI Hai’ou

doi:10.13911/j.cnki.1004-3365.210040

[1] BJERKE B A. LTE-advanced and the evolution of LTE deployments ［J］. IEEE Wireless Commun, 2011, 18(5): 4-5.

[2] CHOI K, KIM M, KIM H, et al. A highly linear two-stage amplifier integrated circuit using InGaP/GaAs HBT ［J］. IEEE J Sol Sta Circ, 2010, 45(10): 2038-2043.

[3] KANG D, CHOI J, KIM D, et al. Design of Doherty power amplifiers for handset application ［J］. IEEE Trans Microwave Theo & Techniq, 2010, 58(8): 2134-2142.

[4] KIM J, KIM D, CHO Y, et al. Envelope tracking two stage power amplifier with dual mode supply modulator for LTE applications ［J］. IEEE Trans Microwave Theo & Techniq, 2013, 61(1): 543-552.

[6] NITESH R S, RAJENDRAN J, RAMIAH H, et al. A 08 mm2 sub-GHz GaAs HBT power amplifier for 5G application achieving 575% PAE and 285 dBm maximum linear output power ［J］. IEEE Access, 2019(7): 158808-158819.

[8] BAH I. Lumped elements for RF and microwave circuits ［M］. Norwood: Artech House, 2003: 377-379.

[9] KIM W, KANG S, LEE K, et al. Analysis of nonlinear behavior of power HBTs ［J］. IEEE Trans Microwave Theo & Techniq, 2002, 50(7): 1714-1722.

[10] JAGADHESWARAN U R, RAMIAH H, MAK P, et al. A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 358-dB gain, 405% to 558% PAE and 28-dBm linear output power ［J］. IEEE Trans Microwave Theo & Techniq, 2016, 64(1): 200-209.

[11] CRIPPS S. RF power amplifiers for wireless communications ［M］. Norwood: Artech House, 2006: 68-73.

[12] BAEK S, AHN H, NAM I, et al. A linear InGaP/GaAs HBT power amplifier using parallel-combined transistors with IMD3 cancellation ［J］. IEEE Microwave & Wireless Compon Lett, 2016, 26(11): 921-923.