[1] Zhang Xiqing, Mei Zengxia, Duan Ning et al.. Exciton optical properties of cdse/cdznse superlattices[J]. Acta Optic Sinica., 2002, 22(1): 114～117

[2] Yan Haiqing, Tang Chen, Zhang Hao et al.. The variable metric algorithm for ground state energy of ionized-donor-bound excitons in semiconductors[J]. Acta Physica Sinica., 2004, 53(11):3877～3881

[3] Liu Jing, Sun Junqiang, Huang Dexiu et al.. Influence on resonant tunneling spectral character of two-dimensional magnetic optical quantum wells[J]. Chin. J. Lasers, 2007, 34(5)：649～654

[4] Zhang Shuang, Guo Shuxu, Gao Fengli et al.. Direct current and 1/f noise characteristics of ingaasp/gaas high power quantum well laser diodes[J]. Chin. J. Lasers, 2008, 34(8):1144～1148

[5] Zhong Gaoyu, Lin Jian, Wang Meiliang et al.. Temperature-dependent luminescence originating from the recombination of excitons in organic light-emitting materials[J]. Acta Optica. Sinica., 2006, 26(4)：585～590

[6] Yao Ming, Zhu Kadi, Yuan Xiaozhong et al.. Effects of exciton-phonon interaction on third-order nonlinear optical properties[J]. Acta Optica Sinica., 2006, 26(4):605～609

[7] Miao Jingqi, Yang Qianli, Gu Shiwei. Exciton-phonon system in a polar semiconductor quantum well[J]. Phys. Rev. B, 1989, 40:9846～9857

[8] Yiang Qianli, Mao Jingqi, Gu Shiwei. Intermediate exciton in quantum well[J]. J. Phys.: Condens. Matter.,1989, 1:10343～10349

[9] Chuu Dersan, Won Winlong, Pei Juihsiang. Longitudinal-optical-phonon effects on the exciton binding energy in a semiconductor quantum well[J]. Phys. Rev. B, 1994, 49:14554～14563

[10] Zheng Ruisheng, Matsuura M. Exciton-phonon interaction effects in quantum wells[J]. Phys. Rev. B, 1997,56:2058～2061

[11] Gerlach B, Usthoff J, Smondyrev M A. Ground-state energy of an exciton-(LO) phonon system in a parabolic quantum well[J]. Phys. Rev. B, 1999, 60:16569～16583

[12] Zhang Hong, Liu Lei, Liu Jianjun. Binding energies of excitons in symmetrical GaAs/Al0.3Ga0.7As double quantum wells[J]. Acta Physica Sinica., 2007, 56(1):487～490

[13] Guo Z Z, Liang X X, Ban S L. Perssure-induced increase of exction-LO phonon coupling in a ZnCdSe/ZnSe quantum well[J]. Phys. Stat. Sol.(b), 2003, 238(1):173～179

[14] Pan Jinsheng. The surface or interface polaron in polar crystals[J]. Phys. Stat. Sol(b).,1985, 127:307～318

[15] Tokuda N. A variational approach to the polaron problem[J]. J. Phys. C: Solid State Phys., 1980, 13:L851～855

[16] Lee T D, Low F M, Pines D. The motion of slow electrons in a crystal[J]. Phys. Rev., 1953, 90:297～302

[17] Brummell M A, Nicholas R J, Hopkins M A et al.. Modification of the electron-phonon interactions in GaAs-GaAlAs heterojunctions[J]. Phys. Rev. Lett., 1987, 58:77～80

[18] Albrich C, Bajaj K K. Binding energy of a Mott-Wannier exciton in a polarizable medium[J]. Solid State Commun., 1997, 22(2):157～160

[19] Balderschi A, Czaja W, Tosatti E et al.. The physics of latent image formation in silver halides[C]. Singapore: World Scientific, 1984, 1～22