Growth and Defects of Novel Substrate Material LiAlO2Crystal

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 18 >Issue 3 >Page 380 > Article

Acta Optica Sinica
Vol. 18, Issue 3, 380 (1998)

Growth and Defects of Novel Substrate Material LiAlO₂Crystal

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and Defects of Novel Substrate Material LiAlO₂Crystal[J]. Acta Optica Sinica, 1998, 18(3): 380 Copy Citation Text

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References

[1] N. Grandjean, J. Massies, Leroux. Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers. Appl. Phys. Lett., 1997, 68(7): 2071～2073

[2] F. A. Ponce, D. P. Bour, W. Gotz et al.. Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition. Appl. Phys. Lett., 1997, 68(7): 917～919

[3] B. Cockayane, B. Lent. The Czochraslki growth of single crystal lithium aluminate, LiAlO2. J. Cryst. Growth, 1981, 54: 546～550

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and Defects of Novel Substrate Material LiAlO₂Crystal[J]. Acta Optica Sinica, 1998, 18(3): 380

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