• Chinese Journal of Quantum Electronics
  • Vol. 20, Issue 1, 30 (2003)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Power Supply of High-power Diode Laser[J]. Chinese Journal of Quantum Electronics, 2003, 20(1): 30 Copy Citation Text show less

    Abstract

    According to the semiconductor laser diode performance characteristic, a kind of high-power diode laser driver was contrived. The output voltage is from 12 to 50 V and the duty ratio is 3 per cent when the maximum output current is 150 A . In the scheme design we used VIGOR device as power module and IGBT as high power change device. The driver circuit is very simple, however, it could restrain current surge efficiently. This ensures that the laser diode doesn't be disturbed. The online protection mechanism could monitor the semiconductor laser in real time. The slowly startup circuit and thermo-control circuit ensure that the semiconductor laser could work safely. Now the driver has been applied in the airborne lidar sample system for over one year. It performs normally and reliably.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Power Supply of High-power Diode Laser[J]. Chinese Journal of Quantum Electronics, 2003, 20(1): 30
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