Fig. 1. (a) Fabrication diagram of a Si:Ag sample. (b) Simulation and SIMS data of the silver concentration depth profiles after the ion implantation and after the PLM. (c) The Raman spectra of the Si:Ag samples after the ion implantation and after the PLM. For the samples after PLM, the spectra with and without 950°C annealing are both shown. (d) Spectral absorptance (1-transmittance-reflectance) of the Si:Ag samples after 950°C annealing. The absorptance of the silicon substrate is also shown for comparison.

Fig. 2. (a) Schematic diagram of fabricated photodetector device components. (b) EQE spectra (900–1600 nm) of the Si:Ag photodetector under reverse bias from 0 V to −3  V with an interval of 0.5 V. (c) EQE increases with the applied reverse bias for 1310 nm and 1550 nm, respectively. (d) The current density-voltage curves of the Si:Ag photodetector in the dark and under the 1310 nm infrared light illumination (0.6  mW ·cm−2).

Fig. 3. (a) DLTS spectra of the Si:Ag MOS diode for the reverse bias voltage of −3  V, −4  V, and −5  V, respectively. The pulse voltage was set as −1  V. (b) Normalized DLTS signals of the Si:Ag samples subjected to different energy fluence fs-PLM processing.

Fig. 4. (a) Illustration of the vilible-blind photodetector working mechanism. (b) Spectral absorptance and EQE of the Si:Ag photodetector. (c) Effect of the fs-laser fluence on the normalized EQE spectra (300–1800 nm) of the Si:Ag photodetectors.

Fig. 5. Illustration of the sub-bandgap and high-gain photoresponse working mechanism.

Fig. 6. (a) Transient photocurrent of the Si:Ag photodetector measured at −3  V under 1310 nm light illumination. (b) Net photocurrent versus incident photon intensity for 1310 nm wavelength.