• Infrared and Laser Engineering
  • Vol. 37, Issue 2, 261 (2008)
[in Chinese]1、2、*, [in Chinese]1、2, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Hydrogenation on HgCdTe photoconductive detectors[J]. Infrared and Laser Engineering, 2008, 37(2): 261 Copy Citation Text show less
    References

    [1] WHITE J K,MUSCA C A,LEE H C,et al.Hydrogenation of ZnS passivation on nalTow-band gap HgCdTe[J]..Applied Physics Letter,2000,76(17):2448-2450.

    [2] Young-Ho Kim,Tae-Sik Kim,Redfern D A,et al.Characteristics of gradually doped LWIR diodes by hydrogenation[J].Journal of Electronic Material,2000,29(6):859-864.

    [3] BOIERIU P,GREIN C H,VELICU S,et al.Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si[J].Applied Physics Letter,2006,88:1-3.

    [4] SrnHARAMAN S,RAMAN R,DURAI L,et al.Effect of hydrogenation on the electrical and optieal properties of CdZnTe substrates and HgCdTe epitaxial layers[J].Journal of Crystal Growth,2005,285(3):318-326.

    [5] CHEN Y F,CGEB W S.Influence of hydrogen passivation on the infrared spectra of Hg0.8Cd0.2Te[J].Applied Physics Letter,1991,59(6):703-705.

    [9] HAN M S,KANG T W,KIM M D,et al.The effect of hydrogenation in HgCdTe thin films grown on P-CdTe(211)substrates[J].Applied Surface Science,1997,120(3-4):287-290.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Hydrogenation on HgCdTe photoconductive detectors[J]. Infrared and Laser Engineering, 2008, 37(2): 261
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