• Photonic Sensors
  • Vol. 6, Issue 1, 63 (2016)
J. M. Torres PEREIRA and Jo?o Paulo N. TORRES*
Author Affiliations
  • Instituto de Telecomunica??es, Instituto Superior Técnico-Universidade de Lisboa, Lisboa, Portugal
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    DOI: 10.1007/s13320-015-0296-2 Cite this Article
    J. M. Torres PEREIRA, Jo?o Paulo N. TORRES. Frequency Response Optimization of Dual Depletion InGaAs/InP PIN Photodiodes[J]. Photonic Sensors, 2016, 6(1): 63 Copy Citation Text show less
    References

    [1] T. P. Pearsall, “Ga0.47In0.53As: a ternary semiconductor for photodetector applications,” IEEE Journal of Quantum Electronics, 1980, 16(7): 709 720.

    [2] Y. G. Wey, K. Giboney, J. Bowers, M. Rodwell, P. Silvestre, P. Thiagarajan, et al., “110 GHz GaInAs/InP double heterostructure p-i-n photodetectores,” Journal of Lightwave Technology, 1995, 13(7): 1490 1499.

    [3] C. M. C. Fernandes and J. M. T. Pereira, “Bandwidth modeling and optimization of PIN photodiodes,” in 2011 IEEE International Conference on Computer as a Tool (EUROCON), Lisbon, pp. 1 4, 2011.

    [4] F. J. Effenberger and A. M. Joshi, “Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector,” Journal of Lightwave Technology, 1996, 14(8): 1859 1864.

    [5] C. C. Fernandes and J. T. Pereira, “Frequency response analysis of dual depletion PIN photodiodes,” in the 12th Portuguese-Spanish Conference on Electrical Engineering (XIICLEEE), Ponta Delgada, pp. 1 4, 2011.

    [6] J. N. Hollenhorst, “Frequency response theory for multilayer photodiodes,” Journal of Lightwave Technology, 1990, 8(4): 531 537.

    [7] J. M. T. Pereira, “Modelling the frequency response of p+InP/n-InGaAs/n+InP photodiodes with an arbitrary electric field profile,” COMPEL – The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 2007, 26(4): 1114 1122.

    [8] C. Hammar and B. Vinter, “Calculation of the velocity-field characteristic of n-InP,” Solid State Communication, 1972, 11(5): 751 754.

    [9] M. Dentan and B. D. Cremoux, “Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination,” Journal of Lightwave Technology, 1990, 8(8): 1137 1144.

    [10] J. B. Radunovic and D. M. Gvozdie, “Nonstationary and nonlinear response of a p-i-n photodiode made of a two-valley semiconductor,” IEEE Transaction on Electron Devices, 1993, 40(7): 1238 1244.

    J. M. Torres PEREIRA, Jo?o Paulo N. TORRES. Frequency Response Optimization of Dual Depletion InGaAs/InP PIN Photodiodes[J]. Photonic Sensors, 2016, 6(1): 63
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