Lin Lai, Yanghui Li, Hui Zhou, Haosheng Xia, Xiaoyu Liu, Chengliang Xia, Le Wang. Study of Film Uniformity on Large-Curvature Substrate Surface Based on Atomic Layer Deposition[J]. Laser & Optoelectronics Progress, 2018, 55(3): 033101
- Laser & Optoelectronics Progress
- Vol. 55, Issue 3, 033101 (2018)
Fig. 1. Internal structural diagram of 100-mm-diameter cylindrical reaction chamber. (a) Pedestal; (b) annular holes; (c) baffle; (d) wall of reaction chamber
Fig. 2. Concentration distributions of TiCl4 gas on hemispheric substrate surface under different moments. (a) 100 ms; (b) 150 ms; (c) 200 ms; (d) 250 ms
Fig. 3. Concentration distributions of precusors at different moments in propagation process. (a) 50 ms; (b) 100 ms; (c) 150 ms; (d) 200 ms
Fig. 4. Fitting curves of film thicknesses on substrate surface at different places. (a) TiO2 films; (b) Al2O3 films
Fig. 5. Fitting curves of film thicknesses on substrate surface under different heights. (a) TiO2 films; (b) Al2O3 films
Fig. 6. Test results of hemispheric refectance spectra
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Table 1. Saturated vapor pressure, viscosity, and relative molecular mass of precursors
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Table 2. Refractive indexes of materials after ALD
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Table 3. Process parameters for Al2O3 and TiO2 films
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