PHOTOCURRENT AND ELECTRON INTERFERENCE OF GaAs/AlGaAs MULTIQUANTUM WELL STRUCTURE

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 20 >Issue 4 >Page 318 > Article

Journal of Infrared and Millimeter Waves
Vol. 20, Issue 4, 318 (2001)

PHOTOCURRENT AND ELECTRON INTERFERENCE OF GaAs/AlGaAs MULTIQUANTUM WELL STRUCTURE

[in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. PHOTOCURRENT AND ELECTRON INTERFERENCE OF GaAs/AlGaAs MULTIQUANTUM WELL STRUCTURE[J]. Journal of Infrared and Millimeter Waves, 2001, 20(4): 318 Copy Citation Text

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References

[1] Makino T. Analytical formulas for optical gain of quantum well.I EEE Journal of Quantum Electronics,1996,32(3): 493

[2] Manasreh M O, Szmulowicz F, Fischer D W,et al. Intersubband infr ared absorption in a GaAs/Al0.3Ga0.7As quantum well structure.Appl .Phys.Lett.,1990,57(7):1790

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