Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer

Quan-Jiang Lv; Yi-Hong Zhang; Chang-Da Zheng; Jiang-Dong Gao; Jian-Li Zhang; Jun-Lin Liu

doi:10.1088/1674-1056/ab96a2

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