Tunnel Regeneration High-Power Semiconductor Laser with Four Active Regions

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Journals >Acta Optica Sinica >Volume 26 >Issue 12 >Page 1819 > Article

Acta Optica Sinica
Vol. 26, Issue 12, 1819 (2006)

Tunnel Regeneration High-Power Semiconductor Laser with Four Active Regions

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Tunnel Regeneration High-Power Semiconductor Laser with Four Active Regions[J]. Acta Optica Sinica, 2006, 26(12): 1819 Copy Citation Text

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References

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[3] Sheng Guangdi,Lian Peng,Guo Xia et al.. Novel large coupled optical cavity semiconductor lasers and multi-active region light emitting diodes with high performances[C]. Proc. SPIE, 2000, 4225: 327～330

[7] J. Ch. Garcia, E. Rosencher, Ph. Collot et al.. Epitaxially stacked lasers with Esaki junctions: a bipolar cascade laser[J]. Appl. Phys. Lett., 1997, 71(26): 3752～3754

[9] J. T. Boyd. Theory of parametric oscillation phase matched in GaAs thin film waveguides[J]. IEEE J. Quant. Electron., 1972, 8(10): 788～796