Fabrication of Mid-Infrared ZnGeP2 Crystals and Devices with Large Apertures and Ultra-Low Absorption Coefficients

Zerui Yuan; Yunwei Dou; Pan Fang; Ying Chen; Wenlong Yin; Bin Kang

doi:10.3788/CJL202249.0101023

Journals >Chinese Journal of Lasers >Volume 49 >Issue 1 >Page 0101023 > Article

Chinese Journal of Lasers
Vol. 49, Issue 1, 0101023 (2022)

Fabrication of Mid-Infrared ZnGeP₂ Crystals and Devices with Large Apertures and Ultra-Low Absorption Coefficients

Zerui Yuan^1、2, Yunwei Dou^1、2, Pan Fang^1、2, Ying Chen^1、2, Wenlong Yin^{1、2、3、*}, and Bin Kang^{1、2、3、**}

Author Affiliations

¹Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang, Sichuan 621999, China

²Sichuan Research Center of New Materials, Chengdu, Sichuan 610200, China

³Key Laboratory of Science and Technology on High Energy Laser, China Academy of Engineering Physics, Mianyang, Sichuan 621999, China

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DOI: 10.3788/CJL202249.0101023 Cite this Article Set citation alerts

Zerui Yuan, Yunwei Dou, Pan Fang, Ying Chen, Wenlong Yin, Bin Kang. Fabrication of Mid-Infrared ZnGeP₂ Crystals and Devices with Large Apertures and Ultra-Low Absorption Coefficients[J]. Chinese Journal of Lasers, 2022, 49(1): 0101023 Copy Citation Text

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ZGP single crystals grown by freezing method with ultralow gradient and ZGP OPO devices. (a) Crystals grown by HGF; (b) crystals grown by VGF; (c) regular ZGP OPO devices; (d) large aperture ZGP OPO devices

Fig. 1. ZGP single crystals grown by freezing method with ultralow gradient and ZGP OPO devices. (a) Crystals grown by HGF; (b) crystals grown by VGF; (c) regular ZGP OPO devices; (d) large aperture ZGP OPO devices

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