The molecular beam epitaxy process of 3 in digital alloy (DA)-nBn InAs/InAs1-xSbx type-II superlattice materials is studied by changing the beam size of the material source and the material growth temperature. The results show that the quality of the grown material is the best when the Sb beam size is 3×10-7 torr and the growth temperature is 470 ℃. The density of defects with a diameter of more than 3 m on the surface of the material is 64 cm-2, the total thickness deviation is 8.16 m, the root mean square value of the roughness of the material relative to the reference surface is 0.339 nm, and the full width at half maximum of the －1st order diffraction satellite peak is 16 arcsec. The grown material is flat and uniform, with good lattice quality. The photoluminescence (PL) spectroscopy results show that the luminescence peak of the material at 75 K is located at 4.69 m; with the increase of temperature, the peak position produces a red-shift. The corresponding relationship between the Sb beam size and the experimental process, as well as the influence of material growth temperature and material defects are studied, which is of great significance for the growth of high-quality 3 in InAs/InAs1-xSbx type-II superlattice materials.