[1] Keller U. Ultrafast all-solid-state laser technology[J]. J. Appl. Phys. (B), 1994, 58

[2] Keller U, Miller D A B, Boyd G D. Solid-state low-loss intracavity saturable absorber for Nd∶YLF: an antiresonant semiconductor Fabry-Perot saturable absorber[J]. Opt. Lett., 1992, 17(5): 505～507

[3] Major A, Langford N, Graf T et al.. Diode-pumped passively mode-locked Nd∶KGd(WO4)2 laser with 1-W average output power[J]. Opt. Lett., 2002, 27(16): 1478～1480

[4] Graf T, Ferguson A I, Bente E. Multi-watt Nd∶YVO4 laser, mode locked by a semiconductor saturable absorber mirror and side-pumped by a diode-laser bar[J]. Opt. Commun., 1999, 159: 84～87

[5] Burns D, Hetterich M, Erguson A I. High-average-power (>20-W) Nd∶YVO4 lasers mode locked by strain-compensated saturable Bragg reflectors[J]. J. Opt. Soc. Am. (B), 2000, 17(6): 919～926

[6] Ju Guifang, Chai Lu, Wang Qingyue. Stable mode locking in a Yb∶YAG laser with a fast[J]. Chin. Opt. Lett., 2003, 1(12): 695～696

[7] Zhang Zhigang, Chai Lu, Zhao Jiangshan. Semiconductor saturable absorber mirror for self starting mode locked Ti∶sapphire lasers[J]. Acta Optica Sinica，2002， 22(9): 1151～1152 (in Chinese)

[9] Zhang Bingyuan, Li Gang, Chen Meng. Passive mode-locking of diode-end-pumped Nd∶GdVO4 laser with!a semiconductor saturable absorber mirror[J]. Opt. Lett., 2003, 28(19): 1829～1831

[10] Zhang Bingyuan, Li Gang, Chen Meng. Comparative study of the mode-locking of Nd∶GdVO4 and Nd∶YAG lasers with semiconductor saturable absorber mirrors[J]. Chin. Opt. Lett., 2003, 1(8): 477～479