• Acta Optica Sinica
  • Vol. 34, Issue 9, 916003 (2014)
Chen Jingdong1、*, Zhang Ting2, and Wang Qingxiang2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: 10.3788/aos201434.0916003 Cite this Article Set citation alerts
    Chen Jingdong, Zhang Ting, Wang Qingxiang. Impact of Hydrothermal Etching Time on Porous Morphology and Photoluminescence of Iron-Passivated Porous Silicon[J]. Acta Optica Sinica, 2014, 34(9): 916003 Copy Citation Text show less
    References

    [1] A G Cullis, L T Canham, P D J Calcott. The structural and luminescence properties of porous silicon [J]. J Appl Phys, 1997, 82(3): 909-965.

    [2] Ding Wenge, Lu Yunxia, Sunxue, et al.. Temperature-dependent photoluminescence of silicon-nanostructure thin film [J]. Acta Optica Sinica, 2012, 32(8): 0831002.

    [3] C Q Li, C Y Zhang, Z S Huang, et al.. Assembling of silicon nanoflowers with significantly enhanced second harmonic generation using silicon nanospheres fabricated by femtosecond laser ablation [J]. J Phys Chem C, 2013, 117(46): 24625-24631.

    [4] Zhang Rongjun, Chen Yiming, Zheng Yuxiang, et al.. Research and progress of silicon luminescence [J]. Chinese J Lasers, 2009, 36(2): 269-275.

    [5] L T Canham. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers [J]. Appl Phys Lett, 1990, 57(10): 1046-1048.

    [6] G G Qin, Y Q Jia. Mechanism of the visible luminescence in porous silicon [J]. Solid State Commun, 1993, 86(9): 559-563.

    [7] X J Li, D L Zhu, Q W Chen, et al.. Strong and nondegrading-luminescent porous silicon prepared by hydrothermal etching [J]. Appl Phys Lett, 1999, 74(3): 389-391.

    [8] Chen Jingdong, Zhao Weiren, Zhang Ting. Photoluminescence stability of iron-passivated porous silicon under ultraviolet light irradiation [J]. Heat Treat Technol Equip, 2008, 29(5): 33-36.

    [9] Y H Zhang, X J Li, L Zheng, et al.. Nondegrading photoluminescence in porous silicon [J]. Phys Rev Lett, 1998, 81(8): 1710-1713.

    [10] Chen Jingdong, Zhang Ting. Fabrication and photoluminescence mechanism of iron-passivated porous silicon [J]. Chin J Lumin, 2014, 35(2): 184-189.

    [11] X L Zheng, W Wang, H C Chen. Anomalous temperature dependencies of photoluminescence for visible-light-emitting porous Si [J]. Appl Phys Lett, 1992, 60(8): 986-988.

    [12] S M Prokes, O J Glembocki. Role of interfacial oxide-related defects in the red-light emission in porous silicon [J]. Phys Rev B, 1994, 49(3): 2238-2241.

    [13] T Y Gorbach, G Y Rudko, P S Smertenko, et al.. Simultaneous changes in the photoluminescence, infrared absorption and morphology of porous silicon during etching by HF [J]. Semicond Sci Tech, 1996, 11(4): 601-606.

    [14] S Shih, K H Jung, D L Kwong, et al.. Photoluminescence study of anodized porous Si after HF vapor phase etching [J]. Appl Phys Lett, 1993, 62(16): 1904-1906.

    [15] T Matsumoto, A I Belogorokhov, L I Belogorokhova, et al.. The effect of deuterium on the optical properties of free-standing porous silicon layers [J]. Nanotechnology, 2000, 11(4): 340-347.

    [16] Zhang Lizhu, Mao Jinchang, Zhang Borui, et al.. Time evolution of the infrared absorption and photoluminescence of porous silicon in air [J]. Chin J Semicond, 1992, 13(11): 715-719.

    [17] A G Revesz. The role of hydrogen in SiO2 films on silicon [J]. J Electrochem Soc, 1979, 126(1): 122-130.

    [18] M Shuji, Y Toshihisa, S Yasushi, et al.. Various types of nonbridging oxygen hole center in high-purity silica glass [J]. J Appl Phys, 1990, 68(3): 1212-1217.

    [19] N Kaya, O Yoshimichi, H Yoshimasa. Gamma-ray induced 2 eV optical absorption band in pure silica core fibers [J]. Jpn J Appl Phys, 1987, 26(6A): L1009-L1011.

    Chen Jingdong, Zhang Ting, Wang Qingxiang. Impact of Hydrothermal Etching Time on Porous Morphology and Photoluminescence of Iron-Passivated Porous Silicon[J]. Acta Optica Sinica, 2014, 34(9): 916003
    Download Citation