The Ge thin films applied in photon counting imaging system based on Ge induction readout were fabricated by electron beam evaporation.The structures of Ge thin films deposited on ceramic and quartz glass substrates and influences of technical parameters on resistance were studied.The X-ray diffraction (XRD) analysis of thin films deposited on the two substrates shows that the thin films deposiited on two kinds of substrates both have cubic amorphous Ge structure.The field emission scanning electron microscopy (FESEM) images indicate that the film deposited on quartz glass is more compact and smooth than that deposited on the ceramic substrate.If the film on the ceramic substrate is too thin,the film is discontinuous,which induces the high resistance.The resistance can be controlled by annealing,depositing rate,or thickness of film.The performance of the system,which adopted Ge layers with different resistance,was studied.These results suggest that resistance of the charge induced layer influences spatial resolution less than the counting rate.