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    Journals >Journal of Semiconductors >Volume 46 >Issue 2 >Page 021403 > Article
    • Journal of Semiconductors
    • Vol. 46, Issue 2, 021403 (2025)
    Synaptic devices based on silicon carbide for neuromorphic computing
    Boyu Ye1, Xiao Liu1,5,*, Chao Wu4, Wensheng Yan1, and Xiaodong Pi2,3,**
    Author Affiliations
  • 1Institute of Carbon Neutrality and New Energy, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
  • 2State key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 3Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China
  • 4Sorbonne Université, Faculté des Sciences, CNRS, Institut Parisien de Chimie Moléculaire (IPCM), UMR 8232, 4 Place Jussieu, 75005 Paris, France
  • 5State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, China
    • show less
    DOI: 10.1088/1674-4926/24100020 Cite this Article
    Boyu Ye, Xiao Liu, Chao Wu, Wensheng Yan, Xiaodong Pi. Synaptic devices based on silicon carbide for neuromorphic computing[J]. Journal of Semiconductors, 2025, 46(2): 021403 Copy Citation Text show less
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    Boyu Ye, Xiao Liu, Chao Wu, Wensheng Yan, Xiaodong Pi. Synaptic devices based on silicon carbide for neuromorphic computing[J]. Journal of Semiconductors, 2025, 46(2): 021403
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